Image sensor wafer bonding method

Abstract

The invention relates to the field of semiconductor manufacturing, in particular to an image sensor wafer bonding method. The image sensor wafer bonding method includes a first step of utilizing the high-density plasma chemistry vapor deposition technique to deposit passivation layer oxide on a device wafer, a second step of carrying out a first chemical mechanical lapping to the device wafer with the deposited passivation layer oxide, a third step of depositing the passivation layer oxide again on the original oxide of the device wafer through adoption of the plasma chemistry vapor deposition technique, a fourth step of carrying out a second chemical mechanical lapping to the device wafer, a fifth step of carrying out annealing treatment to the device wafer after the second chemical mechanical lapping, and a sixth step of bonding the treated device wafer and a ground slide which is subjected to the plasma enhanced chemistry vapor deposition oxide treatment and the chemical mechanical lapping. The image sensor wafer bonding method has the advantages that the plasma enhanced chemistry vapor deposition and the second chemical mechanical lapping are added to the device wafer after the original first chemical mechanical lapping, and consequently the plainness of the surface of the wafer is more effectively achieved, and the problem that holes are likely to generate after bonding is solved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a bonding method of an image sensor wafer. Background technique [0002] Wafer bonding technology refers to the method of tightly combining two wafers through chemical and physical effects. Wafer bonding is often combined with surface silicon processing and used in the processing technology of micro-electromechanical systems. Although wafer bonding is not a direct means of micromachining, it plays an important role in micromachining. By combining with other processing methods, it can provide support and protection for microstructures, and can realize mechanical structure or mechanical structure and mechanical structure. An electrical connection between circuits. The quality of wafer bonding has a direct impact on the performance of the MEMS. [0003] The flatness of the bonded oxide for back-illuminated image sensors is critical for bonding. If the wafer surface is un...

AI Technical Summary

Problems solved by technology

In this process, after high-density plasma chemical vapor deposition oxidation (thickness is generally 16000-24000 angstroms), the surface will be more uneven, which will cause difficulties for chemical mechanical polishing, and it is not easy to achieve global flatness change

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