Image sensor manufacturing method through adoption of metal hard mask

Abstract

The invention relates to the manufacturing field of image sensors, in particular to an image sensor manufacturing method through adoption of a metal hard mask. The image sensor manufacturing method includes a first step of carrying out etching to oxide on the surface of a wafer until a tetraethoxy-silicane layer is exposed, a second step of depositing a layer of isolation oxide layer on the surface, a third step of depositing a layer of metal hard mask, a fourth step of forming an opening through etching to the metal hard mask, a fifth step of coating photoresist on the metal hard mask and removing the photoresist on the upper portion of the opening of the metal hard mask through etching, a sixth step of carrying out etching from a deep through hole to a silicon nitride layer covered on top layer metal of the logic wafer, a seventh step of removing the remaining metal hard mask after etching of the deep through hole, an eighth step of carrying out bottom anti-reflection medium filling to the through hole and carrying out etching to the bottom anti-reflection medium, a ninth step of confirming the etching size of a groove through photoetching, and a tenth step of carrying out groove etching until the top layer metal of a device wafer and the top layer metal of the logic wafer are exposed. Through utilization of the metal hard mask method, the image sensor manufacturing method effectively solves the problem in the prior art that a back-lighting type image sensor is difficult to manufacture due to the fact that the back-lighting type image sensor is small in size.

Description

technical field [0001] The invention relates to the field of image sensor manufacturing, in particular to a method for manufacturing an image sensor with a metal hard mask. Background technique [0002] The back-illuminated image sensor has developed rapidly in recent years because of its excellent imaging effect. Based on the market demand, the present invention changes the circuit design, aiming to manufacture a sensor with a smaller chip and higher imaging quality. There is no new process method to support the new structure. , since the chips are smaller and have smaller critical dimensions, more precise control of the manufacturing process is required. SUMMARY OF THE INVENTION [0003] The technical problem to be solved by the present invention is to provide a method for manufacturing an image sensor with a metal hard mask to solve the problem of difficulty in manufacturing a back-illuminated image sensor in the prior art. [0004] The technical solution of the presen...

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Problems solved by technology

[0003] The technical problem to be solved by the present invention is to provide a method for manufacturing an image sensor with a metal hard mask to solve the problem of difficulty in making a back-illuminated image sensor in the prior art

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