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Bandgap Reference Circuit

A reference circuit and reference voltage technology, applied in the direction of adjusting electrical variables, control/regulating systems, instruments, etc., can solve the problem of inaccurate reference voltage, etc., and achieve the effect of accurate bandgap reference voltage

Active Publication Date: 2015-11-18
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The problem solved by the technical scheme of the present invention is that the reference voltage output by the bandgap reference circuit in the prior art is inaccurate

Method used

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Embodiment Construction

[0021] It can be seen from the background technology that a bandgap reference circuit is usually used in electronic equipment to generate a stable bandgap reference voltage, but when the power supply voltage of the bandgap reference circuit is large, the bias currents of each branch of the bandgap reference circuit are not equal, affecting The accuracy of the bandgap reference voltage.

[0022] The inventors of the present invention studied a prior art bandgap reference circuit. Please refer to figure 1 , figure 1 A schematic structural diagram of a bandgap reference circuit in the prior art is shown, including: a first PMOS transistor PM11, a second PMOS transistor PM12, a third PMOS transistor PM13, a first NMOS transistor NM11, a second NMOS transistor NM12, a A PNP transistor PQ11, a second PNP transistor PQ12, a third PNP transistor PQ13, a first resistor R11 and a second resistor R12. The sources of the first PMOS transistor PM11, the second PMOS transistor PM12 and t...

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PUM

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Abstract

The invention provides a bandgap reference circuit, which comprises a reference circuit, a bias circuit and an addition circuit, wherein the reference circuit comprises two bipolar transistors, the two bipolar transistors are used for generating first reference voltage with the positive temperature factor according to the differential value of the base electrode-emitting electrode voltage of the two bipolar transistors, the bias circuit is used for providing the bias current for the reference circuit and comprises a third NMOS (N-channel metal oxide semiconductor) transistor, the third NMOS transistor ensures that the bias current provided for each branch of the reference circuit under the power supply voltage rise condition is identical, the addition circuit is used for generating the second reference voltage with the negative temperature factor, and in addition, the second reference voltage and the first reference voltage are added for generating the bandgap reference voltage. The bandgap reference circuit provided by the invention is suitable for the application of wide power supply voltage range.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a bandgap reference circuit. Background technique [0002] With the development of semiconductor technology and portable electronic products, the demand for reference voltage sources with low power consumption and high supply voltage range has greatly increased, which has also led to a significant increase in the design requirements for bandgap references. A bandgap reference can generate a reference voltage or reference voltage that is power- and process-independent with defined temperature characteristics. The stability of the bandgap reference has a direct and crucial impact on the generation of the internal power supply of the entire system, the adjustment of the output voltage, and so on. The bandgap reference voltage must be able to overcome the deviation of the manufacturing process, the variation of the system's internal power supply voltage within the operating range,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05F1/56
Inventor 徐光磊
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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