Method and device of broadband bundle uniformity controlling

A uniform and broadband technology, applied in the field of semiconductor equipment manufacturing, can solve the problems of narrow beam current of implanter and inability to quickly inject wafers, etc.

Inactive Publication Date: 2013-05-08
BEIJING ZHONGKEXIN ELECTRONICS EQUIP
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The beam current of the current implanter is narrow and cannot be implanted on the entire wafer quickly. An effective method is to widen the ion beam current. After widening, how to control the uniformity of broadband beam implantation has become a new problem. question

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method and device of broadband bundle uniformity controlling
  • Method and device of broadband bundle uniformity controlling

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0012] The present invention will be further introduced below in conjunction with the specific embodiments of the accompanying drawings. These descriptions are all illustrative, and the present invention is not limited thereto. The scope of the present invention is limited only by the scope of the appended claims.

[0013] exist figure 2 In the schematic diagram of an implementation of the broadband beam uniformity control device, the PMAC closed-loop measurement and control board is inserted into the ISA slot of the industrial computer, and the dose controller communicates with the industrial computer through the SPI adapter for sending and collecting data.

[0014] The moving Faraday cup, the closed-loop Faraday cup and the sampling Faraday cup are connected to the dose controller through a coaxial cable. The moving Faraday cup is used to measure the ion beam profile and the beam distribution density detection in the horizontal direction. The moving Faraday cup will be in t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a device of broadband bundle uniformity controlling. The device of the broadband bundle uniformity controlling mainly comprises an industrial personal computer (IPC) (1), a single program initiation (SPI) adapter (2), a programmable multi axis controller (PMAC) closed loop measurement and control plate (3), a dose controller (4), a linear motor (5), seven sampling faraday cups (6), a closed loop faraday cup 1 (7), a closed loop faraday cup 2 (8), a movable faraday motor (9) and a movable faraday motor (10). The device of the broadband bundle uniformity controlling is characterized in that the PMAC closed loop measurement and control plate (3) is inserted into an industry standard architecture (ISA) slot of the IPC, and the dose controller (4) is communicated with the IPC (1) through the SPI adapter (2) and is used for sending and collecting data. Accurate detecting of broadband bundle ion injection doses, control of uniformity of the distribution of injected ions and the control of the accuracy of the dose can be automatically achieved.

Description

technical field [0001] The invention relates to a method for controlling the uniformity of an ion implanter, relates to an ion implanter, and belongs to the field of semiconductor equipment manufacturing. Background technique [0002] The uniformity control technology of ion implanter is one of the key technologies of ion implanter. Its working principle is based on various control and measurement methods and devices to uniformly and accurately implant ions into the entire wafer surface according to the set dose. As the size of wafers becomes larger and the size of unit devices becomes smaller and smaller, the performance requirements for semiconductor process equipment are also getting higher and higher. The beam current of the current implanter is narrow and cannot be implanted on the entire wafer quickly. An effective method is to widen the ion beam current. After widening, how to control the uniformity of broadband beam implantation has become a new problem. question. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/317H01L21/265
Inventor 彭彬杨占光龙会跃
Owner BEIJING ZHONGKEXIN ELECTRONICS EQUIP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap