Micro-display integrated back-illuminated image sensor oled image transceiver device
An image transceiver and image sensor technology, which is applied to radiation control devices, electro-solid devices, semiconductor devices, etc., can solve problems such as photodiode optical input interference, and achieve mutual non-interference between optical input and output, improved sensitivity, and imaging apertures. high rate effect
Active Publication Date: 2015-10-21
SHENZHEN DIANBANG TECH
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However, the light emitted by the organic light-emitting layer, the reflected light, and the external ambient light incident from the front of the OLED image transceiver device still interfere with the light input of the photodiode
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[0033] The embodiments of the present invention will be described in detail below with reference to the drawings. It should be emphasized that the following description is only exemplary, and is not intended to limit the scope of the present invention and its application.
[0034] reference figure 2 In some embodiments, an OLED image transceiver device of a microdisplay integrated back-illuminated image sensor includes: a silicon substrate and a doped area 100 thereon; an electrode, an insulating layer, and an OLED area 110; and an encapsulation structure and a glass substrate area 120. The front of the device has a display light-emitting surface of an OLED display to display images, light 21 is emitted from the front, and the OLED can emit visible light or infrared light. The back side of the device refers to the opposite side of the front side. The light 25 irradiates from the back side to make the photodiode sensitive, so it is called back-illumination. The light 25 may be ...
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The invention discloses an organic lighting emitting diode (OLED) image transmitting and receiving device of a micro-display integrated back lighting image sensor. The OLED image transmitting and receiving device of the micro-display integrated back lighting image sensor comprises back semiconductor material substrates which are etched and front glass substrates which are used for bearing substrates. An image sensor and an OLED are formed between the semiconductor material substrates and the glass substrates. The back face of the image transmitting and receiving device is a light incident plane, and the front face of the transmitting and receiving device is an image displaying plane. The front of the image sensor is provided with a light resistant layer which is used for removing the interference caused by the light rays which do not enter from the back face to the image sensor. The invention further discloses a prepared method of the OLED image transmitting and receiving device. The OLED image transmitting and receiving device has the advantages that the back lighting diode cannot be affected by an electrode, so that the sensitivity is greatly improved. By using a standard complementary metal-oxide-semiconductor transistor (CMOS) process, the imaging aperture ratio is high, and by using the OLED packaging structure as a carrier of the back face reduction, the packaging performance is enhanced and no extra process is increased, and therefore pure input and output are achieved without being interfered.
Description
Technical field [0001] The invention relates to an OLED image transceiver device, in particular to an OLED image transceiver device with a micro-display integrated back-illuminated image sensor and a manufacturing method thereof. Background technique [0002] Organic light-emitting devices (OLED) have high luminous brightness, low driving voltage, fast response speed, no viewing angle limit, low power consumption, ultra-light and ultra-thin, can have any shape, color output is monochrome, white or near infrared, and long life And other advantages, it has huge application prospects in flat panel displays, flat light sources and other fields. Combined with silicon-based CMOS drive circuits, organic light-emitting devices can integrate functions such as signal capture, signal processing, and control. [0003] Reference figure 1 In the example shown, the photodiode is embedded in the image transceiver device in the OLED microdisplay array. Among them, the photodiode 7 is sensitive to...
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IPC IPC(8): H01L25/16H01L27/146H01L27/32H01L51/56
Inventor 刘萍
Owner SHENZHEN DIANBANG TECH