Power semiconductor device drive circuit
A technology for power semiconductors and driving circuits, applied in semiconductor devices, circuits, transistors, etc., to solve problems such as reduced high-speed switching performance
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no. 1 example ）
[0024] The first embodiment of the power semiconductor device driving circuit is configured as figure 1 shown. The voltage at the control terminal 1a of the power semiconductor device 1 formed by semiconductor switching devices is controlled to control the current flowing between the first terminal 1b and the second terminal 1c. The first terminal 1b and the second terminal 1c are a high-side terminal and a low-side terminal of the power semiconductor device 1, respectively. Thus, the current supplied to the load 2 , which is connected to the first terminal 1 b of the power semiconductor device 1 , is controlled. Although the load 2 is exemplified as being connected to the first terminal 1b, ie, the high potential side, of the power semiconductor device 1, it may also be connected to the second terminal 1c, ie, the low potential side. The power semiconductor device 1 is exemplified by a MOSFET. In case the power semiconductor device 1 is a MOSFET, the control terminal 1a, ...
no. 2 example ）
[0041] The second embodiment of the power semiconductor device driving circuit is configured as image 3 shown. The second embodiment differs from the first embodiment in setting the position of the gate control terminal 5 and changing the configuration of the gate drive circuit 4 . With respect to other components, the second embodiment is the same as the first embodiment, so different components will be described.
[0042] Such as image 3 As shown, a gate control terminal 5 is provided in the gate drive circuit 4 , and a voltage holding circuit 10 , a logic circuit 11 , and three switches (SW) 12 to 14 are provided in the gate drive circuit 4 . Furthermore, an auxiliary power supply 15 is connected to the gate drive circuit 4 . The voltage holding circuit 10, the switch 13, the auxiliary power supply 15 and the like form a gate charging circuit. The resistor 6 and Zener diode 7 provided in the first embodiment are omitted.
[0043] The voltage holding circuit 10 is con...
no. 3 example ）
[0058] The third embodiment of the power semiconductor device driving circuit is configured as Figure 5 shown in . The third embodiment is the first embodiment ( figure 1 ) and the second embodiment ( image 3 )The combination. Since the basic configuration is the same as that of the first and second embodiments, only the differences from the first and second embodiments will be described.
[0059] Such as Figure 5 As shown, the gate control terminal 5 and Zener diode 7 are provided in the same manner as in the first embodiment. In addition, a gate control terminal 5 is also provided for the gate drive circuit 4 . In addition, the voltage holding circuit 10, the logic circuit 11, the first switch 12 to the third switch 14, and the auxiliary power supply 15 are provided in the same manner as the second embodiment. Although the gate control terminal 5 connected to the resistor 6 and the gate control terminal 5 connected to the gate drive circuit 4 are shown as being pro...
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