Ferroelectric thin film and film capacitor using the ferroelectric thin film
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A technology for ferroelectric films and capacitors, applied in the field of ferroelectric films and film capacitors, can solve the problems of insufficient influence of the film structure, and achieve the effect of improving the reliability of life.
Active Publication Date: 2016-04-06
MITSUBISHI MATERIALS CORP
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[0006] So far, technologies that can improve lifetime characteristics by adding elements such as La and Nb to PZT are known, but there are insufficient insights into the influence of the film structure (for example, refer to Patent Documents 1 and 2)
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Embodiment 1～12、 comparative example 1～7
[0035] First, lead acetate was prepared as a Pb raw material, lanthanum acetate as a La raw material, tetra-n-butoxyzirconium as a Zr raw material, tetraisopropoxytitanium as a Ti raw material, and tetraethoxysilane as a Si raw material. In addition, 1-butanol was used as a solvent. Then, the PZT sol-gel solution with the metal composition ratio adjusted to Pb:Zr:Ti=110:52:48 and the PZT sol-gel liquid with the metal composition ratio adjusted to Pb:La:Zr:Ti=110:3:52:48 were synthesized, respectively. PLZT sol-gel solution, and a sol-gel solution doped with Si in PZT adjusted to Pb:Zr:Ti:Si=110:52:48:0.5-5. In addition, 2-ethylhexanoic acid and dimethyl succinate were prepared as organic substances and added to the PZT sol-gel solution at a constant ratio.
[0036] Next, a metal-insulator-metal (MIM, metal-insulator-metal) film capacitor was fabricated on a silicon substrate by the CSD method using the sol-gel solution synthesized above.
[0037] Specifically, as figure 1 A...
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Abstract
The invention provide a ferroelectric film which can increase life reliability, and a film capacitor using the ferroelectric film. The ferroelectric film of the invention adopts a form of mixed compound metal oxides, which is obtained by mixing metal oxides formed by one or more than two elements selected from Bi, Si, Pb, Ge, Sn, Al, Ga, In, Mg, Ca, Sr, Ba, V, Nb, Ta, Sc, Y, Ti, Zr, Hf, Cr, Mn, Fe, Co, Ni, Zn, Cd, Li, Na, K, P, B, Ce, Nd, Sm and Cs with compound metal oxides shown in (PbxLay)(ZrzTi(1-z))O3 (wherein, 0.9<x<1.3, 0<=y<0.1, 0<=z<0.9) according to a certain constant ratio, wherein the form is formed by laminating 2-23 layers of sintering layers, the thickness t of the sintering layer is 45-500 nm, the average x of oriented maximum diameters of crystals in the sintering layers is 200-5000 nm, and the sintering layers all meet the relation of 1.5t<x<23t.
Description
technical field [0001] The present invention relates to a ferroelectric thin film capable of improving lifetime reliability and a film capacitor using the ferroelectric thin film. Background technique [0002] In recent years, the development of using ferroelectric thin films as capacitors or piezoelectric elements has been actively pursued in response to demands for further downsizing of electronic devices. [0003] Lead zirconate titanate (PZT) is a ferroelectric having a perovskite structure and exhibiting excellent dielectric properties. In order to obtain a thin film capacitor using PZT as a dielectric thin film material, the chemical solution deposition (CSD, chemical solution deposition) method using a sol-gel solution has attracted attention because the film formation process is inexpensive and a uniform film composition can be obtained within the substrate surface . [0004] Patent Document 1: Japanese Patent Laid-Open No. H10-335596 (paragraph [0007] to paragraph...
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