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Micro-flow controller based on peltier effect

A Peltier effect, micro-flow technology, applied in the direction of using electrical device flow control, etc., can solve the problems of limiting the performance of the flow controller, not lower than the ambient temperature, etc., to achieve a wide range of gas flow adjustment, rapid increase in flow, Realize the effect of traffic

Active Publication Date: 2013-06-12
SHANGHAI INST OF SPACE PROPULSION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0019] It can be seen that the existing flow controllers that actively adjust the flow rate through heater heating do not have the function of actively increasing the flow rate, because the heater can only heat the temperature of the throttle at the ambient temperature. When the heater is not working, the throttle will The temperature can only drop to the ambient temperature at most, but not below the ambient temperature, which limits the performance of the flow controller

Method used

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  • Micro-flow controller based on peltier effect
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  • Micro-flow controller based on peltier effect

Examples

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specific Embodiment approach 1

[0043] The heat-conducting substrate of the Peltier semiconductor device of the micro-flow controller of this embodiment is installed on the throttling device along the direction of gas flow (herein, this micro-flow controller is called "horizontal Peltier micro-flow controller") , and using a square Peltier semiconductor device, Figure 4 A schematic diagram of its structure. The micro-flow controller is composed of throttle 1, gas inlet 2, gas outlet 3, Peltier semiconductor device 4, heat sink 5, and temperature sensor 6. The two sides of the Peltier semiconductor device are throttle and heat sink respectively. The heat sink can be circular or square, and the size of the surface attached to the Peltier semiconductor device should be able to cover the Peltier semiconductor heat-conducting substrate. The Peltier semiconductor device and the temperature sensor can be fixed to the restrictor by gluing or screwing, and the heat sink can be fixed to the Peltier semiconductor dev...

specific Embodiment approach 2

[0045] This embodiment is a horizontal Peltier microflow controller, and two square Peltier semiconductor devices are used. Figure 5 A schematic diagram of its structure. The micro-flow controller consists of a throttle 1, a gas inlet 2, a gas outlet 3, a Peltier semiconductor device 4, a heat sink 5, and a temperature sensor 6, and the two sides of the Peltier semiconductor device are respectively a throttle and a heat sink. The heat sink can be circular or square, with a circular central hole in the center, and the size of the surface that is bonded to the Peltier semiconductor device must be able to cover the Peltier semiconductor heat-conducting substrate. The Peltier semiconductor device and the temperature sensor can be fixed to the restrictor by gluing or screwing, and the heat sink can be fixed to the Peltier semiconductor device by gluing or screwing, or can be connected by screws, etc. way directly to the restrictor. The two Peltier semiconductor devices can be el...

specific Embodiment approach 3

[0048] This embodiment is a horizontal Peltier micro-flow controller, and uses three square Peltier semiconductor devices, Figure 6 A schematic diagram of its structure. The micro-flow controller is composed of throttle 1, gas inlet 2, gas outlet 3, Peltier semiconductor device 4, heat sink 5, and temperature sensor 6. The two sides of the Peltier semiconductor device are throttle and heat sink respectively. The Peltier semiconductor device and the temperature sensor can be fixed to the restrictor by gluing or screwing, and the heat sink can be fixed to the Peltier semiconductor device by gluing or screwing, or can be connected by screws, etc. way directly to the restrictor. The three Peltier semiconductor devices can be electrically connected in parallel or in series, and the temperature variation of the heat-conducting substrate facing the restrictor is consistent.

[0049] Compared with the horizontal-mounted Peltier micro-flow controller using one and two Peltier semico...

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Abstract

The invention discloses a micro-flow controller based on the peltier effect. The controller comprises a flow restrictor, a gas inlet, a gas outlet, at least one peltier semiconductor device and at least one heat sink. Gas enters the flow restrictor from the gas inlet, after a flow restriction effect is achieved, micro-flow of propellant flows out from the gas outlet, and the flow restrictor and the heat sink are respectively arranged on two faces of a peltier semi-conductor device. By charging the peltier semi-conductor device with electricity and controlling the peltier semi-conductor device, active heating, active cooling and insulation operation can be carried out on the flow restrictor, so that the flow restrictor can fast regulate and stabilize flow of the gas in a large range. Compared with a common micro-flow controller subjected to heating wire active heating and power-off passive cooling, the micro-flow controller carries out active heating and active cooling on the flow restrictor, expands the regulating range of the flow restrictor, and improves regulating speed of the flow restrictor. Efficiency of the peltier semi-conductor device is higher than that of the heating wire during heating.

Description

technical field [0001] The invention relates to an adjustable micro-flow gas flow controller for a spacecraft propulsion system, which is suitable for the micro-flow control of gases commonly used in space propulsion systems such as helium, xenon, argon, nitrogen, etc., and can be used in the fields of electric propulsion, cold air propulsion and the like. Background technique [0002] In the field of micro-flow gas propellants such as electric propulsion and micro-thrust cold gas propulsion used by spacecraft such as satellites and deep space probes, it is necessary to reduce the pressure in the gas cylinder (or storage tank) to a higher level (such as 15MPa) through the propellant supply device. ) gas into the micro-flow gas required by the thruster (for example, for a Hall thruster with a thrust of 40mN and a specific impulse of 1600s, the flow rate of the anode propellant is 2.3mg / s, and the flow rate of the cathode propellant is 0.25mg / s). The propellant supply device g...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05D7/06
Inventor 杭观荣余水淋康小录
Owner SHANGHAI INST OF SPACE PROPULSION
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