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Plasma treatment apparatus and plasma treatment method

A plasma and processing device technology, applied in the field of plasma processing, can solve problems such as large distance, inability to maintain inductive coupling, and plasma extinguishment

Active Publication Date: 2013-06-12
PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, as disclosed in Non-Patent Document 2, the conventional inductively coupled plasma torch has a problem that the plasma becomes unstable when the gas flow rate is increased.
[0012] This is because, in the chamber, when the annular plasma swings, in the downstream area of ​​the gas flow, the distance between the annular plasma and the coil is too large to maintain the inductive coupling, so that the plasma is extinguished

Method used

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  • Plasma treatment apparatus and plasma treatment method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0037] figure 1 It is a cross-sectional view showing the outline of the plasma processing apparatus according to the first embodiment. figure 1 A state of use of a plasma processing apparatus is shown in which a substrate 2 is placed on a substrate mounting table 1 and a thin film 22 on the surface of the substrate 2 is plasma-treated. figure 1 This is a cross-sectional view of the inductively coupled plasma torch assembly cut along a plane perpendicular to the substrate 2 .

[0038] Such as figure 1 As shown, the plasma processing apparatus includes a substrate mounting table 1 and an inductively coupled plasma torch assembly (hereinafter also referred to as “assembly”) T arranged above the substrate mounting table 1 .

[0039] The module T includes a chamber 20 formed of a dielectric member, and the chamber 20 includes an outer dielectric block 4 having a plasma ejection port 8 at a lower end, and an inner dielectric block 5 arranged at an upper end of the outer dielectric...

Embodiment approach 2

[0072] figure 2 It is a cross-sectional view showing the outline of the plasma processing apparatus according to the second embodiment. figure 2 This is a cross-sectional view of the inductively coupled plasma torch assembly cut along a plane perpendicular to the substrate 2 . The description will focus on differences from Embodiment 1.

[0073] The plasma processing apparatus according to Embodiment 2 has the same configuration as Embodiment 1 except that chamber 20 is replaced with chamber 30 .

[0074] The chamber 30 includes an outer dielectric block 24 having a plasma ejection port 28 at a lower end, and an inner dielectric block 25 arranged at an upper end of the outer dielectric block 24 . The outer dielectric block 24 and the inner dielectric block 25 are formed of dielectric components.

[0075] The outer dielectric block 24 has: a cylindrical outer dielectric block main body 24a in which a plasma generation region is formed; The diameter becomes narrower as it ...

Embodiment approach 3

[0080] Figure 4 and Figure 5 A cross-sectional view showing an outline of a plasma processing apparatus according to Embodiment 3. It is a sectional view obtained by cutting the inductively coupled plasma torch unit T along a plane perpendicular to the substrate.

[0081] Such as Figure 4 As shown, in the plasma processing apparatus of Embodiment 3, in addition to figure 2 The tapered portion 25c is replaced by Figure 4 The structure is the same as that of Embodiment 2 except for the shown truncated conical tapered portion 35c whose bottom surface diameter is larger than the diameter of the protrusion 35b. That is, it is different from Embodiment 2 in that a groove is formed on the side of the inner dielectric block 35 , and a plasma generation region is formed between the groove and the inner wall surface of the outer electrolyte block 24 . Even in such a structure, when CW driving is performed at a high frequency, plasma oscillation occurs in the vertical direction...

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Abstract

A plasma treatment apparatus that includes a chamber having an opening portion which serves as a plasma ejection port surrounded by a dielectric member; a gas supply pipe that introduces gas into an inside of the chamber; a solenoid coil disposed in a vicinity of the chamber; a high-frequency power supply having a pulse modulation function which is connected to the solenoid coil; and a base material mounting table disposed on a plasma ejection port side. Plasma can be stably generated using the plasma treatment apparatus.

Description

technical field [0001] The present invention relates to a plasma processing device and a plasma processing method. The present invention relates to a thermal plasma treatment method for treating a base material by irradiating thermal plasma to a base material, or a low-temperature plasma treatment method for treating a base material by irradiating a base material with plasma using a reactive gas or simultaneously irradiating plasma and a flow of reactive gas processing method, etc. Background technique [0002] Conventionally, an inductively coupled plasma torch is widely known as a method for generating high-density thermal plasma under atmospheric pressure. In this method, thermal plasma is generated in a dielectric chamber by supplying high-frequency power to a coil wound outside a cylindrical dielectric chamber (for example, refer to Patent Document 1, Non-Patent Document 1, and Non-Patent Document 2). Inductively coupled plasma guns are used for plasma thermal sprayin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
CPCC23C16/505B44C1/227C23C16/513H01J37/321H01J37/32357H05H1/30
Inventor 奥村智洋
Owner PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO LTD