Composition for producing oxide thin film and method for producing oxide thin film using same
A technology of compound and composition, which is applied in the field of oxide film preparation composition, can solve the problems of unavailable, low resistance, and difficulty in obtaining low resistance and transparent zinc oxide film, and achieve easy operation and no ignitability Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0258] The amount of water added in the preparation of the aforementioned partial hydrolyzate, for example, in the partial hydrolyzate 1, the molar ratio to the aforementioned organozinc compound is preferably 0.05 to 0.8; The molar ratio of the total amount of elemental compounds is preferably 0.05 to 0.8. When the amount of water added is within this range, the reaction product containing the obtained partial hydrolyzate can form a transparent and conductive zinc oxide film in spin coating, dip coating, and spray pyrolysis. Also, when the Group IIIA element compound is partially hydrolyzed alone, the molar ratio of water to the Group IIIA element compound is preferably 0.05 to 0.8.
[0259] For example, when the organozinc compound is partially hydrolyzed by setting the molar ratio of water to 0.4 or more, a partial hydrolyzate obtained by partially hydrolyzing the organozinc compound can be obtained at a high yield of 90% or more based on the zinc contained in the raw mater...
Embodiment 1-1
[0424] At room temperature, dissolve 1.5388 g of 1,2-diethoxyethane solution with 0.1879 g of indium triisopropoxide and 0.1579 g of gallium triisopropoxide, and diethyl zinc and water at O / Zn=0.6 (mol ratio) 1,2-diethoxyethane solution (Zn=3.85wt%) 1.0986 g of the product obtained by hydrolysis was mixed, and further diluted with 1,2-diethoxyethane 6.2633 g to prepare a composition to obtain IGZO as a composite oxide. The molar ratio of each element in this composition is In:Ga:Zn=1:0.99:1.01. The composition, by approximate integer ratio, as IGZO, is intended for InGaZnO 4 film formation.
Embodiment 1-2
[0426] At room temperature, dissolve 1.5713 g of 1,2-diethoxyethane solution with 0.1807 g of indium triisopropoxide and 0.1612 g of gallium triisopropoxide, and diethyl zinc and water at O / Zn=0.6 (mol ratio) 1,2-diethoxyethane solution (Zn=3.85wt%) 0.5205 g of the product obtained by hydrolysis was mixed, and further diluted with 1,2-diethoxyethane 6.3026 g to prepare a composition to obtain IGZO as a composite oxide. The molar ratio of each element in this composition is In:Ga:Zn=2:2.16:1. The composition, by roughly integer ratios, is intended to perform as IGZO's In 2 Ga 2 ZnO 7 film formation.
PUM
| Property | Measurement | Unit |
|---|---|---|
| boiling point | aaaaa | aaaaa |
| electrical resistivity | aaaaa | aaaaa |
| boiling point | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More