Composition for production of oxide thin films and method for producing oxide thin films by using said composition
A zinc oxide thin film and compound technology, applied in the direction of zinc oxide/zinc hydroxide, zinc organic compounds, chemical instruments and methods, etc., can solve the problem of unobtainable, low resistance, difficult to obtain low resistance and transparent zinc oxide thin film, etc. problem, to achieve the effect of no ignition and easy operation
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[0258] The amount of water added in the preparation of the aforementioned partial hydrolyzate, for example, in the partial hydrolyzate 1, the molar ratio to the aforementioned organozinc compound is preferably 0.05 to 0.8; The molar ratio of the total amount of elemental compounds is preferably 0.05 to 0.8. When the amount of water added is within this range, the reaction product containing the obtained partial hydrolyzate can form a transparent and conductive zinc oxide film in spin coating, dip coating, and spray pyrolysis. Also, when the Group IIIA element compound is partially hydrolyzed alone, the molar ratio of water to the Group IIIA element compound is preferably 0.05 to 0.8.
[0259] For example, when the organozinc compound is partially hydrolyzed by setting the molar ratio of water to 0.4 or more, a partial hydrolyzate obtained by partially hydrolyzing the organozinc compound can be obtained at a high yield of 90% or more based on the zinc contained in the raw mater...
Embodiment 1-1
[0424] At room temperature, dissolve 1.5388 g of 1,2-diethoxyethane solution with 0.1879 g of indium triisopropoxide and 0.1579 g of gallium triisopropoxide, and diethyl zinc and water at O / Zn=0.6 (mol ratio) 1,2-diethoxyethane solution (Zn=3.85wt%) 1.0986 g of the product obtained by hydrolysis was mixed, and further diluted with 1,2-diethoxyethane 6.2633 g to prepare a composition to obtain IGZO as a complex oxide. The molar ratio of each element in this composition is In:Ga:Zn=1:0.99:1.01. The composition, by approximate integer ratio, as IGZO, is intended for InGaZnO 4 film formation.
Embodiment 1-2
[0426] At room temperature, dissolve 1.5713 g of 1,2-diethoxyethane solution with 0.1807 g of indium triisopropoxide and 0.1612 g of gallium triisopropoxide, and diethyl zinc and water at O / Zn=0.6 (mol ratio) 1,2-diethoxyethane solution (Zn=3.85wt%) 0.5205 g of the product obtained by hydrolysis was mixed, and further diluted with 1,2-diethoxyethane 6.3026 g to prepare a composition to obtain IGZO as a complex oxide. The molar ratio of each element in this composition is In:Ga:Zn=2:2.16:1. The composition, by roughly integer ratios, is intended to perform as IGZO's In 2 Ga 2 ZnO 7 film formation.
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