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Back-illuminated cmos image sensor

A technology of image sensor and backside injection, which is applied in the field of semiconductors and can solve problems such as reducing quantum efficiency

Active Publication Date: 2015-12-09
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Additional layers in the light path (for example, opaque and reflective metal layers) can limit the amount of light absorbed by the photodiode, thereby reducing quantum efficiency

Method used

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Embodiment Construction

[0041] The making and using of various embodiments of the invention are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable concepts that can be implemented in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the invention.

[0042] The invention will be described in terms of an embodiment in a specific context, namely, a backside illuminated image sensor. However, embodiments of the present invention can also be applied to various image sensors. Various exemplary embodiments are explained in detail below with the aid of figures.

[0043] figure 1 A simplified cross-sectional view of a backside illuminated image sensor according to one embodiment is shown. The backside illuminated image sensor 100 is formed in an epitaxial layer over a silicon substrate. According to the manufacturing proce...

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Abstract

A backside illuminated CMOS image sensor comprises a photo active region formed over a substrate using a front side ion implantation process and an extended photo active region formed adjacent to the photo active region, wherein the extended photo active region is formed by using a backside ion implantation process. The backside illuminated CMOS image sensor may further comprise a laser annealed layer on the backside of the substrate. The extended photo active region helps to increase the number of photons converted into electrons so as to improve quantum efficiency.

Description

[0001] Cross References to Related Applications [0002] This invention is based upon US Prior Application No. 61 / 569,018, "Back-Side Illumination Sensor and Method of Manufacture," filed December 9, 2011, the entire disclosure of which is incorporated herein by reference. technical field [0003] The present invention relates to the field of semiconductors, and more specifically, the present invention relates to a back-illuminated CMOS image sensor. Background technique [0004] As technology advances, complementary metal-oxide-semiconductor (CMOS) image sensors are more popular than conventional charge-coupled devices (CCDs) due to certain advantages inherent in CMOS image sensors. In particular, CMOS image sensors can have high image acquisition speed, low operating voltage, low power consumption, and high noise immunity. In addition, CMOS image sensors can be fabricated on the same high-volume wafer production line as logic and memory devices. Therefore, a CMOS image c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/1464H01L27/14621H01L27/14627H01L27/14685H01L27/14698H01L27/146
Inventor 张简旭珂简荣亮吴斯安
Owner TAIWAN SEMICON MFG CO LTD