Unlock instant, AI-driven research and patent intelligence for your innovation.

Diffusion barrier layer for thin film solar cell

A solar cell and barrier layer technology, applied in the field of solar cells, can solve problems such as mechanical failure of CZTSSe film and device performance impact

Inactive Publication Date: 2013-06-26
INT BUSINESS MASCH CORP
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it has been found that during this annealing step, typically, undesired reactions occur between the environment and the Mo, which negatively affects device performance
Furthermore, in conventional processes, mechanical failure (i.e., delamination) of CZTSSe films usually occurs, especially when the CZTSSe film thickness increases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Diffusion barrier layer for thin film solar cell
  • Diffusion barrier layer for thin film solar cell
  • Diffusion barrier layer for thin film solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] The techniques presented herein address certain issues associated with the fabrication of CuZnSn(S,Se)(CZTSSe) thin-film solar cells. As highlighted above, CZTSSe solar cells typically employ molybdenum (Mo)-coated soda-lime glass (SLG) substrates, and an important device fabrication step for CZTSSe solar cells is in sulfur (S) and / or selenium (Se) environments high temperature annealing to recrystallize CZTSSe into a larger grain structure. During this annealing step, S and / or Se have been shown to react very vigorously with the underlying Mo layer to form (MoS)x and / or (MoSe)x between the CZTSSe absorber layer and the Mo-coated substrate. It has also been found during the study of the present technology that copper (Cu) from CZTSSe also diffuses into (MoS)x and / or (MoSe)x as (MoS)x and / or (MoSe)x are formed.

[0024] The formation of (MoS)x and / or (MoSe)x between the CZTSSe absorber layer and the Mo-coated substrate may cause potential problems. First, (MoS)x and (M...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A method of fabricating a solar cell e.g. CuZnSn(S,Se) (CZTSSe), that includes the following steps. A substrate is coated with a molybdenum (Mo) layer. A stress-relief layer is deposited on the Mo layer. The stress-relief layer is coated with a diffusion barrier. Absorber layer constituent components are deposited on the diffusion barrier, wherein the constituent components comprise one or more of sulfur (S) and selenium (Se). The constituent components are annealed to form an absorber layer, wherein the stress-relief layer relieves thermal stress imposed on the absorber layer, and wherein the diffusion barrier blocks diffusion of the one or more of S and Se into the Mo layer. A buffer layer is formed on the absorber layer. A transparent conductive electrode is formed on the buffer layer.

Description

technical field [0001] The present invention relates to solar cells, and more particularly, to techniques for the manufacture of thin film solar cells. Background technique [0002] One of the main absorber materials used as absorber layers in thin film solar cells is Cu 2 InGa(S,Se) 4 (CIGS). However, the scarcity of indium (In) and gallium (Ga) in CIGS severely limits the expansion of CIGS into wider applications. Recently, CuZnSn(S,Se)(CZTSSe) has attracted a lot of attention due to its potential to replace CIGS. A common practice is to simply replace the CIGS layer within the entire stack of solar cell devices with a CZTSSe layer. However, the maximum quantum efficiency achieved by CZTSSe-based solar cells is much lower than that of CIGS-based solar cells, implying that extensive modifications in the final device structure are necessary. [0003] The most commonly used substrates for thin-film solar cells, including CZTSSe, are molybdenum (Mo)-coated soda lime glass...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/032H01L31/0224
CPCH01L31/022483H01L31/0326H01L31/1864Y02E10/50Y02P70/50H01L31/0224H01L31/032H01L31/18
Inventor 王克嘉B·申N·博杰尔祖克S·古哈
Owner INT BUSINESS MASCH CORP