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Protection Circuits for Semiconductor Devices

A technology for protecting circuits and semiconductors, applied to semiconductor devices, electrical solid state devices, circuits, etc., can solve problems such as inability to comprehensively and correctly evaluate the reliability of semiconductor devices, and achieve the effects of correctly evaluating reliability, improving performance, and avoiding damage

Active Publication Date: 2015-11-25
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The problem to be solved by the present invention is: the protection circuit in the semiconductor device including MOSFET cannot ensure that the semiconductor device can avoid the damage caused by plasma and can carry out reliability tests such as TDDB, ChargePumping, ACNBTI, etc., resulting in the inability to comprehensively and correctly evaluate the semiconductor device reliability

Method used

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  • Protection Circuits for Semiconductor Devices
  • Protection Circuits for Semiconductor Devices
  • Protection Circuits for Semiconductor Devices

Examples

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Embodiment 1

[0028] The semiconductor device described in the present invention includes a MOSFET, and of course the semiconductor device may also include other semiconductor elements. A protection circuit for a semiconductor device includes a PNP transistor, which includes two P-type semiconductors and an N-type semiconductor located between the two P-type semiconductors. The PNP transistor can be made of silicon or germanium, the two P-type semiconductors are heavily doped semiconductors, and the N-type semiconductors are lightly doped semiconductors. One of the P-type semiconductors of the PNP transistor is electrically connected to the gate of the MOSFET, and the other P-type semiconductor is grounded. In this way, when the semiconductor device is subjected to plasma processing, the charges accumulated on the surface of the semiconductor device can be guided away to avoid damage to the semiconductor device. device damage.

[0029] In this embodiment, NMOS is used as an example for the...

Embodiment 2

[0035] The semiconductor device described in the present invention includes a MOSFET, and of course the semiconductor device may also include other semiconductor elements. A protection circuit for a semiconductor device includes an NPN transistor, which includes two N-type semiconductors and a P-type semiconductor located between the two N-type semiconductors. The NPN transistor can be made of silicon or germanium, the two N-type semiconductors are heavily doped semiconductors, and the P-type semiconductors are lightly doped semiconductors. One of the N-type semiconductors of the NPN transistor is electrically connected to the gate of the MOSFET, and the other N-type semiconductor is grounded, so that when the semiconductor device is subjected to plasma processing, the charges accumulated on the surface of the semiconductor device can be guided away to avoid damage to the semiconductor device. device damage.

[0036] In this embodiment, the MOSFET continues to take NMOS as an...

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Abstract

The invention provides a protection circuit of a semiconductor device. The semiconductor device comprises a metal-oxide-semiconductor field-effect transistor (MOSFET). The protection circuit comprises a PNP transistor or an NPN transistor, and a P-type semiconductor of the PNP transistor or an N-type semiconductor of the NPN transistor is grounded. The protection circuit in the semiconductor device can ensure the semiconductor device to be prevented from being damaged by plasmas and ensure that reliability tests like time dependent dielectric breakdown (TDDB), charge pumping, alternating current negative bias temperature instability (AC NBTI) can be conducted on the semiconductor device, and therefore the reliability of the semiconductor device can be evaluated comprehensively and correctly. In addition, when the semiconductor device carries out plasma processing, the protection circuit can ensure that electric charge on the surface of the semiconductor device can be led away fully, damage caused by stored charge on the semiconductor device can be avoided, and performance of the semiconductor device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a protection circuit of a semiconductor device. Background technique [0002] With the development of ultra-large-scale integrated circuits, the application of plasma technology in semiconductor technology is increasing. The reliability problem caused by the damage of semiconductor devices caused by plasma technology has been raised in the 1980s. After the size of semiconductor devices enters the deep submicron level, multi-layer metal wiring is used in its structure to solve the problem of metallization. In its manufacturing process, it needs to undergo multiple metal etching, insulating dielectric deposition and high aspect ratio in the plasma. The etching of holes, that is to say, with the reduction of the size of semiconductor devices, the proportion of plasma technology in the semiconductor process is increasing. At the same time, due to the more stringent requirements ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/02
Inventor 周华阳宋永梁
Owner SEMICON MFG INT (SHANGHAI) CORP