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Method for preparing emitter by lightly doping silver paste

An emitter, lightly doped technology, applied in the final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve the problem of complex light doping methods, solar cell open-circuit voltage and short-circuit current cannot be effectively improved, Affecting the conversion efficiency of cells and other issues, the method is simple, the open circuit voltage and short circuit current are improved, and the effect of increasing the minority carrier life

Inactive Publication Date: 2013-07-03
HENGSHUI YINGLI NEW ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current light doping method is relatively complicated, and the open circuit voltage and short circuit current of the solar cell cannot be effectively improved, which affects the conversion efficiency of the cell.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A kind of emitter preparation method of lightly doped silver paste, its specific steps are as follows:

[0022] (1) Use silver paste as the base material, and add 2 grams of red phosphorus to every kilogram of silver paste;

[0023] (2) Add 2 grams of diluent (C 10 h 18 O), then stirred for 5 minutes;

[0024] (3) Put the above-mentioned stirred mixture into a rolling stirrer, and stir for 2 hours under the conditions of a rotating speed of 50 rpm and a temperature of 40°C;

[0025] (4) Print the silver paste mixed in step (3) onto the silicon wafer through a stainless steel screen, and then put the printed silicon wafer on the belt of the sintering furnace for drying and sintering.

[0026] The temperature of the drying zone of the sintering furnace is set as follows: the temperature of the drying zone 1 is 250°C, the temperature of the drying zone 2 is 280°C, the temperature of the drying zone 3 is 330°C, and the temperature of the drying zone 4 is 350°C. ℃.

[0...

Embodiment 2

[0030] A kind of emitter preparation method of lightly doped silver paste, its specific steps are as follows:

[0031] (1) Use silver paste as the base material, and add 5 grams of red phosphorus to every kilogram of silver paste;

[0032] (2) Add 3.5 grams of diluent (C 10 h 18 O), then stirred for 8 minutes;

[0033] (3) Put the above-mentioned stirred mixture into a rolling stirrer, and stir for 2.5 hours under the conditions of a rotating speed of 80 rpm and a temperature of 45°C;

[0034] (4) Print the silver paste mixed in step (3) onto the silicon wafer through a stainless steel screen, and then put the printed silicon wafer on the belt of the sintering furnace for drying and sintering.

[0035] The temperature of the drying zone of the sintering furnace is set as follows: the temperature of the drying zone 1 is 265°C, the temperature of the drying zone 2 is 305°C, the temperature of the drying zone 3 is 345°C, and the temperature of the drying zone 4 is 365°C. ℃. ...

Embodiment 3

[0039] A kind of emitter preparation method of lightly doped silver paste, its specific steps are as follows:

[0040] (1) Use silver paste as the base material, and mix 8 grams of red phosphorus in every kilogram of silver paste;

[0041] (2) Add 5 grams of diluent (C 10 h 18 O), then stirred for 10 minutes;

[0042] (3) Put the above-mentioned stirred mixture into a rolling stirrer, and stir for 3 hours under the conditions of a rotating speed of 50 rpm and a temperature of 50°C;

[0043] (4) Print the silver paste mixed in step (3) onto the silicon wafer through a stainless steel screen, and then put the printed silicon wafer on the belt of the sintering furnace for drying and sintering.

[0044] The temperature of the drying zone of the sintering furnace is set as follows: the temperature of the drying zone 1 is 280°C, the temperature of the drying zone 2 is 330°C, the temperature of the drying zone 3 is 360°C, and the temperature of the drying zone 4 is 380°C. ℃.

[...

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PUM

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Abstract

The invention discloses a method for preparing an emitter by lightly doping silver paste, and belongs to the technical field of polycrystalline silicon solar cells. The method comprises the following steps of: adding 2 to 8 grams of red phosphorus into each kilogram of silver paste serving as a backing material; adding 2 to 5 grams of diluent into the mixture of the silver paste and the red phosphorus, and then stirring for 5 to 10 minutes; putting the stirred mixture into a rolling stirrer, and stirring for 2 to 3 hours under the condition that the revolving speed is 50 to 100 revolutions per minute and the temperature is 40 to 50 DEG C; and printing the silver paste stirred in the step (2) onto silicon chips through a stainless steel screen, and sintering the silicon chips printed with the silver paste on a furnace zone of a sintering furnace. The method has the advantages that the silver paste doped with a certain quantity of red phosphorus is lightly doped at positions in contact with the silicon chips, and the sintering process parameters are reasonably set, so that the conversion efficiency of the polycrystalline silicon solar cells is improved.

Description

technical field [0001] The invention relates to the technical field of polycrystalline silicon solar cells. Background technique [0002] A solar cell is a thin photoelectric semiconductor that uses solar energy to generate electricity directly. Its basic structure is formed by joining P-type and N-type semiconductors. The most basic material of semiconductor is silicon. Silicon material itself is non-conductive, but if different metal impurities are mixed into silicon, it can be made into P-type and N-type semiconductors, and then there are holes and N-type semiconductors in P-type semiconductors. Type semiconductor has one more potential difference of free electrons to generate current. Therefore, when sunlight is irradiated, the light energy excites the electrons in the silicon atoms, thereby generating convection of electrons and holes. These electrons and holes are affected by the built-in potential and are attracted by N-type and P-type semiconductors respectively. ,...

Claims

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Application Information

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IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 程宾
Owner HENGSHUI YINGLI NEW ENERGY