Check patentability & draft patents in minutes with Patsnap Eureka AI!

Nanometer film pressure sensor based on sacrificial layer technology and manufacturing method thereof

A technology of pressure sensor and sacrificial layer, which is applied to the measurement of the property and force of piezoelectric resistance materials, etc., can solve the problems of good temperature characteristics and low sensitivity ratio, and achieve wide range, low cost, easy integration and miniaturization Effect

Active Publication Date: 2013-07-10
江苏奥尼克电气股份有限公司
View PDF7 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] (2) The surface micromechanical pressure sensor adopts polysilicon force sensitive resistor, compared with diffused silicon, the temperature characteristic is good but the sensitivity ratio is low

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nanometer film pressure sensor based on sacrificial layer technology and manufacturing method thereof
  • Nanometer film pressure sensor based on sacrificial layer technology and manufacturing method thereof
  • Nanometer film pressure sensor based on sacrificial layer technology and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0061] A nano-membrane pressure sensor based on sacrificial layer technology, the structure is as described above, such as Figure 1~Figure 7 As shown, the process steps of the manufacturing method are as follows:

[0062] (1) if image 3 As shown, PECVD is used to deposit silicon dioxide with a thickness of 1.5 μm as the first sacrificial layer 101 (main sacrificial layer), and then deposit a layer of silicon dioxide with a thickness of 0.5 μm to form the second sacrificial layer. 102 serves as an etch channel layer for the sacrificial layer.

[0063] (2) if Figure 4 As shown, LPCVD is used to deposit a layer of polysilicon with a thickness of 2.5 μm to form a polysilicon structure layer, that is, the first layer of polysilicon 103. The annealing conditions are determined according to the conditions of polysilicon deposition (temperature: 900 ° C ~ 1200 ° C; time: 10 min ~ 180 min; nitrogen protection) , forming cavity corrosion holes 3 by dry etching.

[0064] (3) if ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a nanometer film pressure sensor based on sacrificial layer technology and a manufacturing method thereof. The sensor comprises a monocrystalline silicon substrate, a polycrystalline silicon pressure sensing film with a step-shaped section is arranged on the substrate, a sealing cavity is formed between the pressure sensing film and the substrate by adopting the sacrificial layer technology, four polycrystalline silicon nanometer film strain resistors are arranged on the upper surface of a film piece, the four strain resistors are connected through a metal guide wire to form a Wheatstone electrical bridge, pressure is converted into voltage to be output, and corrosion holes are formed in the lower edges of steps of the pressure sensing film. The nanometer film pressure sensor has the advantages of being small in volume, high in sensitivity, good in temperature characteristic, compatible in manufacturing process and integrated circuit process and the like.

Description

technical field [0001] The invention mainly relates to a nano-membrane pressure sensor based on sacrificial layer technology and a manufacturing method thereof, belonging to the field of micro-electromechanical systems (MEMS). Background technique [0002] With the development of microelectronics technology, using the piezoresistive effect and good elasticity of semiconductor materials, semiconductor pressure sensors have been developed with integrated circuit technology and silicon micromachining technology. Due to the advantages of small size, light weight and high sensitivity, semiconductor pressure sensors are widely used in environmental control, transportation, medical inspection, aviation, petrochemical, electric power, etc. [0003] According to the processing technology, semiconductor pressure sensors are divided into two types: bulk silicon micromachining and surface micromachining. Bulk silicon micromachines use single crystal silicon anisotropic etching technol...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01L1/18
Inventor 揣荣岩王健于能斌李春峰
Owner 江苏奥尼克电气股份有限公司
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com