Unlock instant, AI-driven research and patent intelligence for your innovation.

Non-volatile magnetic tunnel junction transistor

A magnetic tunnel junction and magnetic technology, applied in the direction of semiconductor devices, magnetic field controlled resistors, digital memory information, etc., can solve the problems of CMOS power increase, no voltage scaling, high-performance computing available cooling power limitation, etc.

Active Publication Date: 2013-07-10
IBM CORP
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, further voltage reductions below 1 V are limited by fundamental limits in threshold voltage and gate oxide thickness scaling
[0004] Without sufficient voltage scaling, CMOS power thus increases to the point where the laptop is a lap heater, high performance computing is limited by available cooling power, and mobile computing performance is limited by battery life

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Non-volatile magnetic tunnel junction transistor
  • Non-volatile magnetic tunnel junction transistor
  • Non-volatile magnetic tunnel junction transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] The invention has been described with reference to the embodiments of the invention. For a full description of the invention reference is made to figure 1 -8. When referring to the drawings, like structures and elements shown throughout are indicated with like reference numerals.

[0015] Described here is a new logic device that utilizes magnetic voltage control. The term "magnetic voltage control" is used when setting a voltage across an insulation system, with negligible steady state current flow. Power dissipation in this case is limited to the transient current that flows to charge the wiring and devices to the applied voltage.

[0016] As described in detail below, the non-volatile magnetic tunnel junction of the inventive concept is a 4 terminal transistor operating at eg 100 mV. Complementary devices can be fabricated from the same type of device only by wiring the terminals differently. When power is removed, the device remains in its logic state. Since t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An example embodiment is an apparatus for controlling a magnetic direction of a magnetic free layer. The apparatus includes a writer with a first magnetic write layer and a second magnetic write layer. Applying a write voltage across first and second magnetic write layers causes a magnetic anisotropy of one of the magnetic write layers to switch from parallel to the plane of the magnetic write layers to orthogonal to the plane of the magnetic write layers. The magnetic write layer with the magnetic anisotropy parallel to the plane of the magnetic write layers induces the magnetic direction in the magnetic free layer.

Description

technical field [0001] This invention relates to transistors, and more particularly to voltage control of the magnetism for nonvolatile magnetic tunnel junctions. Background technique [0002] The continuous performance improvement from CMOS scaling over the past 40 years is over. While density scaling is expected to continue for at least another decade, transistor and circuit-level performance is now severely limited by power constraints. The semiconductor industry has focused on this issue over the past decade and has attempted numerous modifications of CMOS transistors to lower voltages. [0003] Traditionally, CMOS power has been contained by reducing the operating voltage each generation. Supply voltages have dropped significantly from 5V in technology used in the 1970s to around 1V in technology being manufactured today. However, further voltage reductions below 1 V are limited by fundamental limits in threshold voltage and gate oxide thickness scaling. [0004] Wi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/14
CPCG11C11/1675G11C11/1655G11C11/1659G11C11/161G11C11/1673H10N50/10G11C11/15G11C11/16H01L29/82
Inventor D·C·沃莱吉
Owner IBM CORP