Polysilicon granule preparation system and preparation method

A preparation system, polysilicon technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of uneven particle size of polysilicon particles, large loss rate of polysilicon fine powder, low utilization rate of polysilicon seed crystals, etc., to achieve Improve the utilization rate of raw materials, high production efficiency and output, and inhibit the effect of adhesion and deposition

Active Publication Date: 2013-07-24
ZHEJIANG JINGGONG NEW MATERIAL TECH
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  • Abstract
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  • Claims
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AI Technical Summary

Problems solved by technology

[0008] The present invention aims to solve the problems that polysilicon particles in the prior art are easy to deposit on the inner wall of a fluidized bed reactor, and the obtained polysilicon particles have uneven particle size, low utilization rate of polysilicon seed crystals, and high loss rate of polysilicon fine powder. A polysilicon particle preparation system that can effectively inhibit the deposition of polysilicon particles on the inner wall of a fluidized bed reactor, increase the utilization rate of polysilicon seed crystals, and reduce the loss rate of polysilicon fine powder

Method used

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  • Polysilicon granule preparation system and preparation method
  • Polysilicon granule preparation system and preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0043] Such as figure 1 In the shown embodiment, a polysilicon granule preparation system includes a rotary fluidized bed, a primary cyclone separator 16, a secondary cyclone separator 20, a carrier gas filter 21, a material preheating storage tank 14 and an exhaust buffer Tank 13, the rotary fluidized bed includes a reaction cylinder 1, an upper head 2 and a lower head 3, the middle of the reaction cylinder 1 is covered with a ring gear 4, and the reaction cylinder 1 on both sides of the ring gear 4 is respectively covered with a The tire belt 5, the reaction cylinder body 1 is obliquely installed on the supporting wheel 6 corresponding to the position of the tire belt 5 through the tire belt 5, and the upper head 1 and the lower head head 2 are respectively fixed on the reaction cylinder body 1 by means of magnetic sealing. The upper and lower ends are fixed on the ground through brackets, and the entire rotary fluidized bed is supported by the cooperation of the supporting ...

Embodiment 2

[0051]Compared with Example 1, the polysilicon particle preparation system of this embodiment differs in that the inclination angle of the rotary fluidized bed is 30°, the thickness of the inner liner 9 is 2 mm, and the openings on the surface of the baffle 10 are rate of 25%, the cross-section of the baffle baffle 10 is a circle with a diameter of 18 cm, the turning angle of the baffle 11 is 100°, and the first heating device 12 and the second heating device 15 are resistors. All the other heating devices are identical to those in Example 1, so they will not be repeated here.

[0052] A method for preparing polysilicon particles, comprising the steps of:

[0053] (1) The polysilicon seed crystals with a particle size of 10-100 μm in the material preheating storage tank 14 are preheated to a surface temperature of 1200° C. by the second heating device 15 .

[0054] (2) Put the preheated polysilicon seed crystal into the rotary fluidized bed, the rotating speed of the reaction...

Embodiment 3

[0059] Compared with Example 1, the polysilicon particle preparation system of this embodiment differs in that the inclination angle of the rotary fluidized bed is 40°, the thickness of the inner liner 9 is 3 mm, and the openings on the surface of the baffle 10 are The ratio is 30%, the cross-section of the baffle channel 11 of the baffle plate 10 is a circle with a diameter of 20 cm, the turning angle of the baffle channel 11 is 60°, and the first heating device 12 and the second heating device 15 are both inductive All the other heating devices are identical to those in Example 1, so they will not be repeated here.

[0060] A method for preparing polysilicon particles, comprising the steps of:

[0061] (1) The polysilicon seed crystals with a particle size of 10-100 μm in the material preheating storage tank 14 are preheated to a surface temperature of 1300° C. by the second heating device 15 .

[0062] (2) Put the preheated polysilicon seed crystal into the rotary flui...

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Abstract

The invention discloses a polysilicon granule preparation system, and solves the problems of the polysilicon particles in prior art, such as easy deposition on wall of a fluidized bed reactor, nonuniform particle size, low utilization rate of the polysilicon seed crystal and large loss rate of polycrystalline silicon fine powder. The system comprises an aslant arranged rotating fluidized bed, a first stage cyclone separator, a second stage cyclone separator, a carrier gas filter, a material preheating tank and a tail gas buffer tank. The reaction cylinder in the middle of the rotating fluidized bed can rotate relatively to end sockets at the two ends; and the rotating fluidized bed is provided with a baffle plate. The invention can effectively restrain deposition of the polycrystalline silicon particles in the fluidized bed reactor wall, improve utilization rate of polycrystalline silicon and reduce the loss rate of polycrystalline silicon fine powder. The invention also discloses a preparation method of polycrystalline silicon particles. The preparation method has advantages of stable process, good continuity of operations, high utilization rate of polycrystalline silicon, high efficiency of polycrystalline production and uniform size of the obtained polysilicon granules.

Description

technical field [0001] The invention relates to the technical field of polysilicon production, in particular to a system and method for preparing polysilicon particles. Background technique [0002] Polycrystalline silicon is the raw material for preparing monocrystalline silicon and solar cells, and is the foundation of the global electronics industry and photovoltaic industry. At present, the most important method for industrially producing high-purity polysilicon is the improved Siemens method, and the polysilicon produced accounts for 70-80% of the total production in the world today. The production process of the improved Siemens method is to use HCl and industrial silicon powder to synthesize SiHCl at a certain temperature 3 , then for SiHCl 3 Separation and rectification purification, purified SiHCl 3 High-purity polysilicon is obtained by chemical vapor deposition in a bell-type hydrogen reduction furnace. The improved Siemens process has the advantages of high t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/021
CPCY02P20/129
Inventor 李波宫有圣汤川·理查德
Owner ZHEJIANG JINGGONG NEW MATERIAL TECH
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