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Three-junction cascade solar battery and preparation method thereof

A technology for solar cells and triple-junction cells, which is applied to circuits, photovoltaic power generation, electrical components, etc., can solve the problems of increasing the production cost of the battery, the complexity of the production process, etc. Effect

Active Publication Date: 2013-07-24
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a triple-junction cascaded solar cell and its preparation method to solve the problems in the prior art that the production cost of the battery and the complexity of the manufacturing process will be increased in order to obtain a high-efficiency triple-junction solar cell

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  • Three-junction cascade solar battery and preparation method thereof
  • Three-junction cascade solar battery and preparation method thereof
  • Three-junction cascade solar battery and preparation method thereof

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Embodiment Construction

[0020] The triple-junction cascaded solar cell provided by the present invention and its preparation method will be described in detail below with reference to the accompanying drawings.

[0021] Firstly, the specific implementation manner of the triple-junction cascaded solar cell of the present invention is given with reference to the accompanying drawings.

[0022] Reference attached figure 1 , 2 As shown, among them, figure 1 It is a structural schematic diagram of the three-junction cascaded solar cell provided by this specific embodiment grown in a front-mounted manner, figure 2 for figure 1 The structural schematic diagram of the finished product of the three-junction cascaded solar cell is shown, and the attached figure 1 , 2 The structure shown is described in detail.

[0023] In the research on GaAs materials, it is found that by adjusting the components of quaternary materials BInGaAs and GaNAsBi, the quaternary materials can have ideal bandwidth and suitable...

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Abstract

The invention provides a three-junction cascade solar battery, comprising a GaNAsBi bottom battery, a first tunnel junction, a BInGaAs intermediate battery, a second tunnel junction and an AlGaInP top battery which are connected on a GaAs substrate in sequence, wherein the AlGaInP top battery and the GaAs substrate are respectively provided with electrodes. The invention also provides a preparation method of the three-junction cascade solar battery. The preparation method comprises the following steps of: (1) growing the GaNAsBi bottom battery, the first tunnel junction, the BInGaAs intermediate battery, the second tunnel junction, the AlGaInP top battery and an ohmic contact layer on the GaAs substrate in sequence; and (2) respectively preparing an upper electrode and a lower electrode on the AlGaInP top battery and the GaAs substrate and obtaining a targeted solar battery. The invention has the advantages that lattice constants of all subbatteries are matched with the GaAs substrate, so that the production cost is reduced; and a forward growing method is adopted for growth, the preparation process is simple and the battery efficiency is improved.

Description

technical field [0001] The present invention relates to the field of solar cells, in particular to a GaAs-based positive triple-junction cascaded solar cell using boride- and bismuth-containing quaternary materials BInGaAs and GaNAsBi, and having an optimized band gap combination, and a preparation method thereof. The solar cell can make full use of the solar spectrum, and meet the current matching of each sub-cell, with high cell efficiency. Background technique [0002] In the development process of III-V compound semiconductor solar cells, in order to improve the conversion efficiency of the cells, it is necessary to divide the solar spectrum, and use matching sub-cells with different band gaps in series to achieve full utilization of sunlight. Purpose. In triple-junction solar cells, the currently researched relatively mature system is the lattice-matched growth of GaInP / GaAs / Ge (1.9 / 1.42 / 0.7eV) triple-junction solar cells. 32-33% (one sun). Calculations show that the...

Claims

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Application Information

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IPC IPC(8): H01L31/0687H01L31/0304H01L31/18
CPCY02E10/544Y02P70/50
Inventor 孙玉润董建荣李奎龙曾徐路于淑珍赵勇明赵春雨杨辉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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