5results about How to "Avoid complex processes" patented technology

This invention discloses a method for fabricating a highly sensitive long-wavelength infrared superconducting single-photon detector. It fully utilizes and amplifies the acoustic mismatch effect between the superconducting thin film and the substrate to achieve phonon localization enhancement on the superconducting nanowires. The effect of this innovative design is to increase the energy utilization rate of long-wavelength infrared photons on the superconducting nanowires, thereby improving the response sensitivity of the superconducting nanowires to long-wavelength infrared photon signals. Compared to existing designs that reduce the cross-sectional size of the superconducting nanowires, create holes beneath the nanowires, or increase the buffer layer, this invention is easier to implement and has higher scalability.

This invention discloses a self-cleaning radiative cooling coating based on biomass carbon quantum dots, its preparation method, and its application. The coating comprises a polymer film-forming resin, carbon quantum dots, and hollow glass microspheres; wherein the mass ratio of the polymer film-forming resin to the filler is 1:(0.1-0.5), and the mass ratio of the hollow glass microspheres to the carbon quantum dots is 1:(0.05-0.2). This invention synergistically enhances solar reflectivity through the photoluminescence properties of carbon quantum dots and the scattering properties of hollow glass microspheres, while simultaneously utilizing the synergistic effect of fluorinated resin and modified hollow glass microspheres to endow the coating with superhydrophobic self-cleaning function. A single layer of this coating can achieve a solar reflectivity >92%, mid-infrared emissivity >94%, and contact angle >150°, possessing both efficient daytime radiative cooling and long-lasting self-cleaning performance. It is particularly suitable for passive heat dissipation of outdoor equipment such as new energy vehicle charging piles, and features simple process, environmental friendliness, and excellent performance.

The present application relates to the technical field of mine sensor, in particular to a mine wind speed and non-contact sensing bionic flexible sensor and a preparation method thereof, which mainly solves the technical problems of existing wind speed measuring sensor, such as serious mechanical wear, high starting wind speed, limited measuring accuracy, and low integration degree of independent layout and integration with proximity detection sensor. The sensor comprises an upper electrode layer, a dielectric layer and a lower electrode layer fixedly connected in sequence from top to bottom. The upper electrode layer comprises a first substrate and flexible cilia arranged on the top surface of the first substrate. The top surface of the first substrate and the flexible cilia are collectively covered with a first conductive film. The upper electrode layer serves as a resistance test layer to measure wind speed and as a voltage test layer to realize non-contact proximity detection. The lower electrode layer comprises a second substrate and a second conductive film, which serves as an excitation electrode layer to generate an excitation electric field. The present application also provides a preparation method of the sensor. The present application integrates dual functions in a single sensor, has high integration degree, no mechanical wear and low starting wind speed.

The application provides a monolithic integrated multifunctional composite sensor and a preparation method thereof, and adopts single-silicon single-surface silicon microfabrication technology to predefine and cover a first micro groove of a gas flow sensing unit, to form a pressure reference cavity and a pressure sensitive diaphragm first, to predefine a single-crystal silicon thermocouple arm and a heating resistor pattern through the first micro groove and a side wall protection, to protect the pressure sensing unit through a heat insulation medium layer, to form a heat insulation cavity and a temperature sensing unit, to finally realize integration of the gas flow sensing unit, the pressure sensing unit and the temperature sensing unit on the same monolithic wafer, and to realize the structure of the heat insulation cavity and the pressure reference cavity in the same single-crystal silicon substrate. The method replaces traditional double-sided processing technology, solves the problem that a traditional composite chip is difficult to realize small size, avoids a complex process caused by a traditional silicon-silicon or silicon-glass bonding structure, greatly reduces process difficulty and cost, improves the yield of the composite chip, and improves the reliability of the sensor.

The invention discloses a novel electrowetting display panel and a display device thereof. The display panel comprises a substrate, a supporting structure arranged on the substrate and a pixel electrode formed on the supporting structure. The supporting structure is provided with a slope surface, so that the working surface of the pixel electrode covering the supporting structure presents a corresponding inclined or arched geometrical morphology, and the inclination angle of the slope surface is preferably 10-30 degrees. The support structure can be formed by photoresist through halftone mask exposure, development and hot reflux processes. The preparation method comprises the steps of forming the supporting structure with the slope surface, and sequentially forming the pixel electrode and the hydrophobic insulating layer on the supporting structure. Effective directional guiding force is provided for ink shrinkage through the slope electrode structure, and rapid and complete resetting of ink can be realized under low driving voltage, so that the response speed and the contrast ratio of the display panel are remarkably improved, the power consumption is reduced, and the key problem that the electrowetting display performance of a traditional planar electrode is limited is solved.