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12results about How to "Avoid complex processes" patented technology

Copper electrode slurry, metal electrode and preparation method thereof, and photovoltaic cell

The invention relates to the technical field of photovoltaic cells, and provides copper electrode slurry, a metal electrode, a preparation method of the metal electrode and a photovoltaic cell. The copper electrode slurry comprises a metal composition, a dispersion reducing agent, a composite curing agent and an optional solvent, the metal composition at least comprises copper powder and optional gold powder and / or silver powder; the composite curing agent comprises thermosetting resin and a latent curing agent; wherein the mass ratio of the metal composition to the composite curing agent is (7-30): 1. The copper electrode paste provided by the invention replaces expensive silver paste, so that the manufacturing cost of a solar cell energy electrode is greatly reduced. According to the method for preparing the metal electrode, the position of the copper electrode can be precisely machined, damage to the amorphous silicon layer is avoided, remelting and solidification of the copper electrode are achieved through multiple times of laser scanning, and the problem that the adhesive force between the copper electrode and the substrate is poor is effectively solved.
Owner:GUANGDONG UNIV OF TECH +1

A method for fabricating a high-sensitivity long-wavelength infrared superconducting single-photon detector

This invention discloses a method for fabricating a highly sensitive long-wavelength infrared superconducting single-photon detector. It fully utilizes and amplifies the acoustic mismatch effect between the superconducting thin film and the substrate to achieve phonon localization enhancement on the superconducting nanowires. The effect of this innovative design is to increase the energy utilization rate of long-wavelength infrared photons on the superconducting nanowires, thereby improving the response sensitivity of the superconducting nanowires to long-wavelength infrared photon signals. Compared to existing designs that reduce the cross-sectional size of the superconducting nanowires, create holes beneath the nanowires, or increase the buffer layer, this invention is easier to implement and has higher scalability.
Owner:NANJING UNIV

Self-cleaning radiative cooling coating based on biomass carbon quantum dots, its preparation method and application

PendingCN122278271AReduce processing burdencurb emissionsBiomass carbonNew energy
This invention discloses a self-cleaning radiative cooling coating based on biomass carbon quantum dots, its preparation method, and its application. The coating comprises a polymer film-forming resin, carbon quantum dots, and hollow glass microspheres; wherein the mass ratio of the polymer film-forming resin to the filler is 1:(0.1-0.5), and the mass ratio of the hollow glass microspheres to the carbon quantum dots is 1:(0.05-0.2). This invention synergistically enhances solar reflectivity through the photoluminescence properties of carbon quantum dots and the scattering properties of hollow glass microspheres, while simultaneously utilizing the synergistic effect of fluorinated resin and modified hollow glass microspheres to endow the coating with superhydrophobic self-cleaning function. A single layer of this coating can achieve a solar reflectivity >92%, mid-infrared emissivity >94%, and contact angle >150°, possessing both efficient daytime radiative cooling and long-lasting self-cleaning performance. It is particularly suitable for passive heat dissipation of outdoor equipment such as new energy vehicle charging piles, and features simple process, environmental friendliness, and excellent performance.
Owner:ZHEJIANG UNIV

Mine wind speed and non-contact sensing bionic flexible sensor and preparation method thereof

The present application relates to the technical field of mine sensor, in particular to a mine wind speed and non-contact sensing bionic flexible sensor and a preparation method thereof, which mainly solves the technical problems of existing wind speed measuring sensor, such as serious mechanical wear, high starting wind speed, limited measuring accuracy, and low integration degree of independent layout and integration with proximity detection sensor. The sensor comprises an upper electrode layer, a dielectric layer and a lower electrode layer fixedly connected in sequence from top to bottom. The upper electrode layer comprises a first substrate and flexible cilia arranged on the top surface of the first substrate. The top surface of the first substrate and the flexible cilia are collectively covered with a first conductive film. The upper electrode layer serves as a resistance test layer to measure wind speed and as a voltage test layer to realize non-contact proximity detection. The lower electrode layer comprises a second substrate and a second conductive film, which serves as an excitation electrode layer to generate an excitation electric field. The present application also provides a preparation method of the sensor. The present application integrates dual functions in a single sensor, has high integration degree, no mechanical wear and low starting wind speed.
Owner:TAIYUAN UNIVERSITY OF TECHNOLOGY

Electromagnetic shielding device

The invention discloses an electromagnetic shielding device, and relates to the technical field of electromagnetic shielding, the electromagnetic shielding device comprises a shielding wire and a wiring terminal arranged on the shielding wire, the shielding wire comprises a shielding layer, a connecting ring is arranged in the circumferential direction of the shielding layer, and the shielding layer and the connecting ring are fully wrapped in the circumferential range. The connecting ring and the shielding layer are extruded in the radial direction to form annular electrical connection, and the metal shell of the wiring terminal and the connecting ring are fully wrapped in the circumferential range to form electrical connection in the circumferential range. The connecting ring and the shielding layer are extruded in the radial direction to form 360-degree annular electrical connection, the signal layer is prevented from being exposed relative to the shielding layer, and the shielding effect of the shielding layer is improved.
Owner:SHENZHEN ENVICOOL TECH

Combined separation method for lead-zinc-silver ore associated with iron and manganese

The invention provides a combined separation method for lead-zinc-silver ore associated with iron and manganese, belongs to the field of ore dressing, and realizes effective separation and recovery of different metals in the lead-zinc-silver ore associated with iron and manganese through processes of raw ore crushing, wet grinding, bulk flotation and magnetic separation. According to the flotation-magnetic separation combined technology, a conventional flotation reagent is adopted, the reagent cost is reduced, and meanwhile silver-containing minerals and sulfide minerals are effectively collected. According to the method, a silver-lead-zinc preferential flotation process and a subsequent separation step are omitted, and the reagent cost and the mineral separation cost are remarkably reduced. The device is high in adaptability and easy and convenient to operate, the regulation and control difficulty of a production line and the operation difficulty of workers are reduced, and the loss of silver in the separation process is avoided. By simplifying the process and improving the recovery rate, the method is beneficial to reducing environmental pollution and promoting effective utilization of resources. Aiming at the associated iron-manganese-lead-zinc-silver ore with complex components, the flotation-magnetic combined process can effectively separate various valuable metals and impurity minerals, and the ore dressing efficiency is improved.
Owner:NENJIANG KUNYUAN MINING CO LTD +2

Monolithic integrated multifunctional composite sensor and method of manufacturing the same

The application provides a monolithic integrated multifunctional composite sensor and a preparation method thereof, and adopts single-silicon single-surface silicon microfabrication technology to predefine and cover a first micro groove of a gas flow sensing unit, to form a pressure reference cavity and a pressure sensitive diaphragm first, to predefine a single-crystal silicon thermocouple arm and a heating resistor pattern through the first micro groove and a side wall protection, to protect the pressure sensing unit through a heat insulation medium layer, to form a heat insulation cavity and a temperature sensing unit, to finally realize integration of the gas flow sensing unit, the pressure sensing unit and the temperature sensing unit on the same monolithic wafer, and to realize the structure of the heat insulation cavity and the pressure reference cavity in the same single-crystal silicon substrate. The method replaces traditional double-sided processing technology, solves the problem that a traditional composite chip is difficult to realize small size, avoids a complex process caused by a traditional silicon-silicon or silicon-glass bonding structure, greatly reduces process difficulty and cost, improves the yield of the composite chip, and improves the reliability of the sensor.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

Anti-corrosion durable assembly type profile steel-UHPC (Ultra High Performance Concrete) externally-wrapped roof composite beam

The utility model relates to the technical field of composite beams, and discloses an anti-corrosion durable assembly type profile steel-UHPC outer wrapping roof composite beam which comprises a base, an installation mechanism is fixedly arranged on the top face of the base, and an auxiliary mechanism is fixedly arranged on the side face of the installation mechanism. The mounting mechanism comprises a mounting part and a connecting part; the side surface of the mounting part is fixedly connected with the side surface of the connecting part; the mounting part comprises a lower box-shaped column, and the bottom surface of the lower box-shaped column is in sealing contact with the top surface of the base. By adopting an ultra-high performance concrete material and a special formula, the assembly type profile steel-UHPC externally-wrapped roof combination achieves the effects of high durability and high corrosion resistance, the problem of a complex process of a conventional prestressed concrete beam is solved, the overall cost is saved through the excellent performance of UHPC ultra-high performance concrete, steel bar materials are reduced, the construction process is optimized, the innovative structure is achieved, and the assembly type profile steel-UHPC externally-wrapped roof combination is suitable for large-scale popularization and application. And the profile steel-UHPC externally-wrapped roof composite beam structure can be widely applied to water conservancy building structures.
Owner:ZHONGLU DURA INT ENG CO LTD

Lubrication gear assembly

According to the lubricating gear assembly, a lubricating agent enters the liquid inlet hole of the liquid supply assembly through external supply equipment, flows into the liquid supply assembly from the liquid inlet hole and enters the first flowing channel of the aluminum gear through the liquid outlet hole. The driving gear of the wind generating set rotates to drive the aluminum gear and the soft gear to rotate around the liquid supply assembly. The lubricant flows out through the first flowing channel of the aluminum gear and is smeared on the driving gear, so that lubrication between the gears is ensured, and abrasion is reduced. Automatic lubrication of the driving gear of the wind driven generator is achieved, manual operation is not needed, and the maintenance efficiency is greatly improved. The lubricant can be uniformly smeared on each lubricating point of the driving gear, gear abrasion is reduced, and the service life of the gear is prolonged. The aluminum gear and the soft gear are combined, so that the complex process of machining an integral aluminum block of a traditional lubricating gear is avoided, the weight of the assembly is reduced, and carrying and assembling are facilitated.
Owner:SHENZHEN LUBE-IN SYST CO LTD

Electrowetting display panel, display device and preparation method thereof

The invention discloses a novel electrowetting display panel and a display device thereof. The display panel comprises a substrate, a supporting structure arranged on the substrate and a pixel electrode formed on the supporting structure. The supporting structure is provided with a slope surface, so that the working surface of the pixel electrode covering the supporting structure presents a corresponding inclined or arched geometrical morphology, and the inclination angle of the slope surface is preferably 10-30 degrees. The support structure can be formed by photoresist through halftone mask exposure, development and hot reflux processes. The preparation method comprises the steps of forming the supporting structure with the slope surface, and sequentially forming the pixel electrode and the hydrophobic insulating layer on the supporting structure. Effective directional guiding force is provided for ink shrinkage through the slope electrode structure, and rapid and complete resetting of ink can be realized under low driving voltage, so that the response speed and the contrast ratio of the display panel are remarkably improved, the power consumption is reduced, and the key problem that the electrowetting display performance of a traditional planar electrode is limited is solved.
Owner:XINLI OPTICAL RENSHOU CO LTD

Diamond-based sunken electrode photoconductive switch and preparation method thereof

The invention relates to a diamond-based sunken electrode photoconductive switch and a preparation method thereof. The preparation method comprises the following steps: growing a diamond etching mask layer on the surface of an insulating diamond substrate; performing photoetching on the diamond etching mask layer to define an electrode etching area of the insulating diamond substrate, and defining an alignment mark area at the same time; removing the diamond etching mask layer in the electrode etching region and the alignment mark region; etching the insulating diamond substrate in the electrode etching area and the alignment mark area; carrying out organic cleaning and RCA cleaning on the etched insulating diamond substrate; performing oxygen plasma treatment on the etched and cleaned insulating diamond substrate to form a surface oxygen terminal; defining an electrode sputtering region through the alignment mark by using a photoetching overlay process; and manufacturing an ohmic contact electrode sinking into the electrode groove in the electrode sputtering area. According to the method, the manufacturing cost and difficulty of the diamond photoconductive switch are reduced, and the voltage withstanding characteristic and the conduction characteristic of the device are improved.
Owner:XIDIAN UNIV

Structure and preparation method of an antimonide quantum well CMOS device

The present invention discloses a structure of an antimonide quantum well CMOS device and a preparation method thereof, belonging to the field of microelectronic technology. The device structure comprises: a substrate; a buffer layer is provided on the substrate; a p-channel antimonide quantum well layer and an n-channel antimonide quantum well layer are relatively independently provided on the buffer layer; a passivation isolation layer is provided between the p-channel antimonide quantum well layer and the n-channel antimonide quantum well layer. The antimonide quantum well structure provided by the present invention can, on the one hand, reduce the dislocation density caused by lattice mismatch through component regulation, and on the other hand, effectively isolate the channel from the high-k gate medium through a barrier layer, and form a two-dimensional electron / hole gas on the channel surface, thereby improving the mobility and improving the device performance. The present invention also provides a method for preparing an antimonide quantum well CMOS device, which realizes the epitaxial growth of n-channel and p-channel materials of the same system.
Owner:SHAANXI UNIV OF SCI & TECH