Device structure and its production for single-modulus quantum cascade laser

Abstract

The invention is concerned with devices structure of single mode quantum cascade laser. It relates to one N type InP underlay, one N type InGaAs lower wave-guide layer made on N type InP underlay, 35 cycle InGaAs / InAlAs commutative active layer on the lower wave-guide layer, one N type InGaAs upper wave-guide layer on active layer, one N type InAlAs upper cladding on the N type InGaAs upper wave-guide layer, one N type InGaAs high doping contact layer on N type InAlAs upper cladding, one N type InGaAs ohm contact layer on N type InGaAs high doping contact layer, one SiO2 dielectric layer on the upper surface and sidewall in type of double grooves of whole material, and the SiO2 dielectric layer is separate to form current injecting window, one frontispiece N type electrode made on the SiO2 dielectric layer and one rear N type electrode made on the back of N type InP underlay.

Description

technical field

[0001] The invention relates to the technical field of semiconductors, in particular to a device structure and a manufacturing method of a single-mode quantum cascade laser. Background technique

[0002] Because the 3-14μm mid-to-far infrared band is a very important atmospheric window, it has extremely important application prospects in national defense, medicine, environmental protection, gas detection, chemical spectroscopy, free space communication, etc., and the lasing wavelength of conventional semiconductor lasers is limited. Limited to the forbidden band width of semiconductor materials, there are few narrow band gap materials in nature, and it is very difficult to obtain semiconductor lasers with mid-to-far infrared wavelengths. In order to meet the application needs of solid-state light sources in the mid- and far-infrared bands, scientists jumped out of the classical theory of the lasing mechanism of traditional p-n junction semiconductor lasers, a...

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