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Organic light-emitting device and manufacturing method thereof

A technology of light-emitting devices and organic electronics, which is applied in the field of organic electronic light-emitting devices and its manufacturing, which can solve the problems of large pixel space in TFT arrays, low aperture ratio of display pixels, and difficult to increase pixel density, so as to increase the aperture ratio and simplify the manufacturing process , the effect of compact structure

Active Publication Date: 2015-09-02
EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its manufacturing process is quite complicated, and the pixel space occupied by the TFT array is relatively large, so that the aperture ratio of the display pixel is low, and it is difficult to increase the pixel density.

Method used

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  • Organic light-emitting device and manufacturing method thereof
  • Organic light-emitting device and manufacturing method thereof
  • Organic light-emitting device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0062] Such as figure 1 As shown, the first embodiment of the organic light-emitting device of the present invention mainly includes a substrate 100, four electrodes, two insulating layers and two organic layers. In detail, the first embodiment of the organic light-emitting device includes a substrate 100, a first gate electrode 1 formed on the upper surface of the substrate 100, a first insulating layer 2 formed on the upper surface of the substrate 100 and covering the first gate electrode 1, The first organic layer 3 formed on the upper surface of the first insulating layer 2, the source electrode 7 and the drain electrode 8 formed on both sides of the upper surface of the first organic layer 3, the upper surface and the source electrode formed on the remaining part of the first organic layer 3 7 and the second organic layer 4 on the upper surface of the drain electrode 8 , the second insulating layer 5 formed on the upper surface of the second organic layer 4 , and the sec...

Embodiment 2

[0076] Such as image 3 As shown, the structure of the second embodiment of the organic light-emitting device of the present invention is basically the same as that of the first embodiment, the only difference is that in the organic light-emitting device of the second embodiment, the source electrode 7 is formed on the second insulating The right side of the layer 4 is located on the lower surface of the second insulating layer 5 , and the drain electrode 8 is formed on the left side of the first organic layer 3 . The advantage of the arrangement of the source electrode 7 and the drain electrode 8 is that the injection of electrons and holes in this structure is the top electrode injection, so that the injection efficiency will be optimized. In addition, under this structure, the electron and hole transmission paths are relatively fixed, and the electrons and holes will only be transmitted between the two electrodes, which is similar to the OLED vertical structure, and the cha...

Embodiment 3

[0079] Such as Figure 4 As shown, the structure of the third embodiment of the organic light-emitting device of the present invention is basically the same as that of the first embodiment, except that the organic light-emitting device of the third embodiment further includes a third organic layer 9 . The third organic layer 9 is an N-type organic semiconductor, a P-type organic semiconductor, a bipolar organic semiconductor, or a doped material-type organic semiconductor including a host (host) and a guest (dopant), such as Alq3, TAZ, TPD, Bepp2, Bebp2 , Zn(ODZ)2, Al(ODZ)3, Zn(BIZ)2, NPB, PyPySPyPy, BCzVBi, perylene and its derivatives, etc. The third organic layer 9 is formed between the first organic layer 3 and the second organic layer 4 . The source electrode 7 and the drain electrode 8 are located on both sides of the third organic layer 9 .

[0080] In the third embodiment of the organic electronic light-emitting device, the first organic layer 3 and the second organi...

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Abstract

An organic electronic light emitting device includes a substrate; a first gate electrode formed on a top surface of the substrate; a first insulating layer formed on the top surface of the substrate and covering the first gate electrode; an organic layer formed on a top surface of the first insulating layer and comprising at least two organic layers with different conductivity type; a second insulating layer formed on a top surface of the organic layer; a second gate electrode formed on a top surface of the second insulating layer; and a source electrode and a drain electrode formed between the first and second insulating layers, and the source and drain electrodes located on both sides of the organic layer respectively.

Description

technical field [0001] The invention relates to an organic electronic light-emitting device and a manufacturing method thereof. Background technique [0002] Since organic field effect transistors and stacked organic light-emitting diodes were reported in the 1980s, organic electronic devices have received extensive attention and rapid development. Due to the advantages of low preparation cost, good flexibility, and large-area preparation of organic semiconductors, organic optoelectronic devices will have unlimited application space in the fields of large-area flat panel display, flexible display, and lighting. Organic light emitting diodes (OLEDs) have been put into practical use as application elements for displays. By using OLED, a display panel with higher color saturation, larger viewing angle, higher contrast ratio and more power saving than LCD can be obtained. [0003] In an active-matrix organic light-emitting diode (AMOLED) display, it is necessary to use a thin-...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/00H01L51/50H01L51/56H01L51/05H01L51/40H10K99/00
CPCH01L51/5296H01L27/3274H01L51/0554H01L2251/308H10K59/125H10K10/482H10K50/30H10K2102/103
Inventor 洪飞
Owner EVERDISPLAY OPTRONICS (SHANGHAI) CO LTD