Bipolar non-punch-hrough power semiconductor device

Abstract

A bipolar non-punch-through power semiconductor device is provided. It comprises a semiconductor wafer (2) and a first electrical contact on a first main side and a second electrical contact on a second main side. The wafer (2) comprises an inner region (22) with a wafer thickness (23) and a termination region (24), which surrounds the inner region (22) and in which the wafer thickness (23) is reduced at least on the first main side with a negative bevel. The semiconductor wafer (2) comprises at least a two-layer structure with layers of different conductivity types: - a drift layer (26) of a first conductivity type, a first layer of a second conductivity type directly connected to the drift layer (26) on the first main side and contacting the first electrical contact, which first layer extends to a first layer depth, and - a second layer of the second conductivity type, which is arranged in the termination region (24) on the first main side up to a second layer depth. The second layer depth is larger than the first layer depth, which first layer depth is at most 45 [mu]m. The doping concentration of the second layer is lower than the doping concentration of the first layer.

Description

technical field [0001] The invention relates to the field of power electronics and more particularly to a bipolar non-punch-through power semiconductor arrangement according to the preamble of claim 1 and a method for manufacturing such a power semiconductor arrangement. Background technique [0002] No. 5,710,442 describes a phase-controlled thyristor (PCT) 10 having a wafer 2 on which a cathode contact 3 is arranged on a cathode side 31 . The anode contact 4 is formed on the anode side 41 of the wafer opposite the cathode side 31 . Inside the wafer 2 a (n−)-doped drift layer 26 is arranged. A p-doped base layer 5 is provided on this drift layer 26 towards the cathode side 31 , which contacts the cathode contact 3 . The (N+) doped cathode layer 7 and the (p+) short region 8 are embedded in the base layer 5 . They also contact the cathode electrode 3 . Transverse to cathode contact 3 and separated therefrom by drift layer 26 is arranged gate contact 95 . [0003] Arrang...

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Problems solved by technology

[0007] Since this angle (at which the thickness of the edge layer 50, 60 decreases) is small (approximately 2°) in order to slowly reduce the electric field towards the lateral edge...

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