Tri-phase modular multi-level converter and fault-tolerate detecting method for IGBT (insulated gate bipolar translator) open circuit fault in sub-modules thereof

A multi-level converter, three-phase module technology, applied in the direction of converting AC power input to DC power output, instruments, measuring electricity, etc., can solve problems such as the inability of the whole machine to work, the low reliability of MMC, and the high maintenance cost. , to achieve the effect of improving efficiency, reducing current stress and reducing conduction loss

Active Publication Date: 2013-08-14
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to solve the problem that the existing MMC adopts a half-bridge topology and a capacitor structure, and the open circuit fault of any IGBT in any sub-module will cause the whole m...

Method used

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  • Tri-phase modular multi-level converter and fault-tolerate detecting method for IGBT (insulated gate bipolar translator) open circuit fault in sub-modules thereof
  • Tri-phase modular multi-level converter and fault-tolerate detecting method for IGBT (insulated gate bipolar translator) open circuit fault in sub-modules thereof
  • Tri-phase modular multi-level converter and fault-tolerate detecting method for IGBT (insulated gate bipolar translator) open circuit fault in sub-modules thereof

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specific Embodiment approach 1

[0042] Specific implementation mode one: the following combination figure 1 and figure 2 Describe this embodiment, the IGBT open-circuit fault detection fault tolerance method in the three-phase modular multi-level converter and its sub-modules described in this embodiment, it includes the upper bridge arm of A phase, the lower bridge arm of A phase, and the upper bridge arm of B phase arm, B-phase lower arm, C-phase upper arm, and C-phase lower arm,

[0043] A-phase upper bridge arm, A-phase lower bridge arm, B-phase upper bridge arm, B-phase lower bridge arm, C-phase upper bridge arm and C-phase lower bridge arm form a three-phase full-bridge topology structure, each bridge arm is composed of n The sub-modules and the inductor L are sequentially connected in series, and n is a positive integer greater than or equal to 2;

[0044] The positive output terminal of the upper bridge arm of phase A, the positive output terminal of the upper bridge arm of phase B and the positiv...

specific Embodiment approach 2

[0057] Specific implementation mode two: the following combination Figure 3 to Figure 8 Describe this embodiment, the IGBT open-circuit fault detection fault tolerance method in the sub-module of the three-phase modular multilevel converter described in the first embodiment, the method includes the following steps:

[0058] Step 1. The driving signal of the four IGBTs in each sub-module is S1 gate driving pulse u g1 , S2 gate drive pulse u g2 , S3 gate drive pulse u g3 and S4 gate drive pulse u g4 ,

[0059] u g1 The high level duration is T on-1 , u g3 The high level duration is T on-3 ,T on-1 = T on-3 ,

[0060] u g2 The high level duration is T on-2 , u g4 The high level duration is T on-4 ,T on-2 = T on-4 ,

[0061] u g1 and u g3 The low level duration is T on-2 +2△T,

[0062] △T is the independent working time of a single IGBT,

[0063] u g2 and u g4 The low level duration is T on-1 +2△T,

[0064] u g3 compare u g1 Delay △T, u g4 compare u g...

specific Embodiment approach 3

[0086] Specific implementation mode three: this implementation mode is a further limitation on implementation mode two, in order to ensure that the output voltage U of the sub-module can be measured A Under the premise that the independent working time of a single IGBT is as short as possible, in this implementation mode:

[0087] △T=1 / 10T on-1 ~1 / 5T on-1 .

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Abstract

A tri-phase modular multi-level converter and a fault-tolerate detecting method for an IGBT (insulated gate bipolar translator) open circuit fault in sub-modules thereof belong to the field of electronics and aim to solve the problem that the whole machine cannot work caused by the open circuit fault of the existing MMC. The invention adopts a method of connecting two hemi-bridge power units in parallel in each sub-module of the converter, and the IGBT with the open circuit can be positioned by measuring the output voltage UA of the sub-modules and simultaneously applying a certain phase shift control on the IGBTs in the two hemi-bridge power units in at most half alternating current period, and the modular multi-level converter can be continuously operated when any IGBT in any sub-module is subjected to open circuit fault, thus solving the problem of low reliability and frequent halt for repairing of the traditional modular multi-level converter. In addition, the conducting loss of the IGBT can be reduced due to the parallel connecting work mode of the power units and the converting efficiency of the electric energy of the converter is improved.

Description

technical field [0001] The invention relates to a fault-tolerant method for detecting an IGBT open-circuit fault in a three-phase modular multilevel converter and a sub-module thereof, belonging to the field of power electronics. Background technique [0002] In recent years, Modular Multilevel Converter (MMC) has attracted much attention in the field of high voltage and high power. Its topology is composed of multiple sub-modules with the same structure. Each sub-module is composed of a half-bridge topology and a capacitor. By increasing the number of sub-modules, it can be flexibly expanded to high voltage and high power, and its power components can work in Low switching frequency, high energy conversion efficiency, small voltage and current peaks, and very low output voltage harmonic content make it very suitable for high-voltage and high-power electric energy conversion occasions such as flexible direct current transmission. [0003] The power components of modular mul...

Claims

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Application Information

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IPC IPC(8): G01R31/02H02M7/483
CPCH02M1/32H02M2007/4835H02M1/088H02M7/4835
Inventor 徐殿国李彬彬杨荣峰高强
Owner HARBIN INST OF TECH
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