Tri-phase modular multi-level converter and fault-tolerate detecting method for IGBT (insulated gate bipolar translator) open circuit fault in sub-modules thereof
A multi-level converter, three-phase module technology, applied in the direction of converting AC power input to DC power output, instruments, measuring electricity, etc., can solve problems such as the inability of the whole machine to work, the low reliability of MMC, and the high maintenance cost. , to achieve the effect of improving efficiency, reducing current stress and reducing conduction loss
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
specific Embodiment approach 1
[0042] Specific implementation mode one: the following combination figure 1 and figure 2 Describe this embodiment, the IGBT open-circuit fault detection fault tolerance method in the three-phase modular multi-level converter and its sub-modules described in this embodiment, it includes the upper bridge arm of A phase, the lower bridge arm of A phase, and the upper bridge arm of B phase arm, B-phase lower arm, C-phase upper arm, and C-phase lower arm,
[0043] A-phase upper bridge arm, A-phase lower bridge arm, B-phase upper bridge arm, B-phase lower bridge arm, C-phase upper bridge arm and C-phase lower bridge arm form a three-phase full-bridge topology structure, each bridge arm is composed of n The sub-modules and the inductor L are sequentially connected in series, and n is a positive integer greater than or equal to 2;
[0044] The positive output terminal of the upper bridge arm of phase A, the positive output terminal of the upper bridge arm of phase B and the positiv...
specific Embodiment approach 2
[0057] Specific implementation mode two: the following combination Figure 3 to Figure 8 Describe this embodiment, the IGBT open-circuit fault detection fault tolerance method in the sub-module of the three-phase modular multilevel converter described in the first embodiment, the method includes the following steps:
[0058] Step 1. The driving signal of the four IGBTs in each sub-module is S1 gate driving pulse u g1 , S2 gate drive pulse u g2 , S3 gate drive pulse u g3 and S4 gate drive pulse u g4 ,
[0059] u g1 The high level duration is T on-1 , u g3 The high level duration is T on-3 ,T on-1 = T on-3 ,
[0060] u g2 The high level duration is T on-2 , u g4 The high level duration is T on-4 ,T on-2 = T on-4 ,
[0061] u g1 and u g3 The low level duration is T on-2 +2△T,
[0062] △T is the independent working time of a single IGBT,
[0063] u g2 and u g4 The low level duration is T on-1 +2△T,
[0064] u g3 compare u g1 Delay △T, u g4 compare u g...
specific Embodiment approach 3
[0086] Specific implementation mode three: this implementation mode is a further limitation on implementation mode two, in order to ensure that the output voltage U of the sub-module can be measured A Under the premise that the independent working time of a single IGBT is as short as possible, in this implementation mode:
[0087] △T=1 / 10T on-1 ~1 / 5T on-1 .
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com