Solid-state image sensing device
A sensing device and solid-state image technology, applied in image communication, electric solid-state devices, television, etc., can solve the problems of large circuit scale and no description
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no. 1 example
[0040] [installation layout]
[0041] will refer to figure 1 The circuit diagram shown in describes the arrangement of an image sensor 100 used as a solid-state image sensing device according to one embodiment. The image sensor 100 will be referred to as a CMOS image sensor, which performs photoelectric conversion on a subject image obtained by receiving light and outputs an electrical signal as a digital signal. The image sensor 100 includes the following main circuit blocks.
[0042] The pixel unit 10 functions as a photoelectric conversion region. The vertical scanning circuit 11 scans the pixel unit 10 . The amplification unit 20 amplifies the analog pixel signal output from the pixel unit 10 . The reference signal source 12 functions as a reference signal generating unit that generates a reference signal having a ramp voltage or the like.
[0043] The comparison unit 30 compares the pixel signal with a reference signal. The counter 40 counts the comparison period of...
no. 2 example
[0071] A solid-state image sensing device and an A / D conversion method therefor according to a second embodiment of the present invention will be described below. Note that in the second embodiment, the same components as those in the first embodiment have the same reference numerals, and a detailed description thereof will be omitted.
[0072] will refer to Figure 6 The timing chart shown in describes the operation of the selection circuit 31 according to the second embodiment.
[0073] To input the reference signal 1 to the comparator 32 , the selection circuit 31 closes the switch 111 and opens the switch 114 , thereby selectively connecting the reference signal line 15 - 1 to the reference signal connection node 103 . At the same time, the selection circuit 31 opens the switch 112 and closes the switch 113, thereby selectively connecting the capacitor 102 to the reference signal line 15-2. At this time, the pixel outputs a reset signal. During the N conversion period, ...
no. 3 example
[0080] A solid-state image sensing device and an A / D conversion method therefor according to a third embodiment of the present invention will be described below. Note that in the third embodiment, the same components as those in the first and second embodiments have the same reference numerals, and a detailed description thereof will be omitted.
[0081] will refer to Figure 7 The timing chart shown in describes the operation of the selection circuit 31 according to the third embodiment.
[0082] To input the reference signal 1 to the comparator 32 , the selection circuit 31 closes the switch 111 and opens the switch 114 , thereby selectively connecting the reference signal line 15 - 1 to the reference signal connection node 103 . At the same time, the selection circuit 31 opens the switch 112 and closes the switch 113, thereby selectively connecting the capacitor 102 to the reference signal line 15-2. At this time, the pixel outputs a reset signal. During the N conversion...
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