Heat-conductive gap interface material and preparation method thereof

A technology of interface materials and gaps, applied in the direction of chemical instruments and methods, other chemical processes, etc., to achieve the effect of improving thermal conductivity and reducing material thickness

Inactive Publication Date: 2013-08-21
SHENZHEN DARBOND INTERFACE MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, for electronic manufacturers, this kind of prod...

Method used

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  • Heat-conductive gap interface material and preparation method thereof
  • Heat-conductive gap interface material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0035] Such as figure 1 As shown, accurately weigh 1100 parts of the resin matrix, and add 10 parts of functional additive 4, add it into the mixing mixer, and stir for 20 minutes at a vacuum of -0.1MPa. After the stirring is completed, add it to the above mixture Add 100 parts of thermally conductive filler (2) 3, stir for 7 minutes at a vacuum of -0.1MPa, add 150 parts of thermally conductive filler (1) 2, and stir for 10 minutes at a vacuum of -0.1MPa to produce The mixture was molded into a 5 mm sheet, and cured at 130° C. for 30 minutes to obtain the interface material for thermally conductive gaps.

[0036] Wherein, the parts are all parts by weight. The thermally conductive filler (1) is aluminum oxide, and the thermally conductive filler (2) is zinc oxide.

Embodiment 2

[0038] Accurately weigh 100 parts of the resin matrix, add 25 parts of functional additives, add it into the mixing mixer, and stir for 40 minutes under a vacuum of -0.1MPa. After the stirring is completed, add 100 parts of the above mixture Stir the thermally conductive filler (2) for 5 minutes at a vacuum of -0.1MPa, add 150 parts of the thermally conductive filler (1), stir for 30 minutes at a vacuum of -0.1MPa, and then discharge the mixture into 5mm sheet, cured at 130°C for 20 minutes, the thermal gap interface material was obtained.

[0039] Wherein, the parts are all parts by weight. The thermally conductive filler (1) is aluminum hydroxide, and the thermally conductive filler (2) is boron nitride.

Embodiment 3

[0041] Accurately weigh 100 parts of the resin matrix, add 10 parts of functional additives, add it into the mixing mixer, and stir for 30 minutes at a vacuum of -0.1MPa. After the stirring is completed, add 50 parts of Stir the thermally conductive filler (2) for 10 minutes at a vacuum of -0.1MPa, add 200 parts of the thermally conductive filler (1), stir for 30 minutes at a vacuum of -0.1MPa, and then discharge the mixture into 5mm sheet, after curing for 40 minutes at 130°C, the thermal gap interface material was obtained.

[0042] Wherein, the parts are all parts by weight. The thermally conductive filler (1) is aluminum hydroxide, and the thermally conductive filler (2) is aluminum oxide.

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Abstract

The invention relates to a heat-conductive gap interface material and a preparation method thereof. The heat-conductive gap interface material comprises 100 parts by weight of a resin matrix and 250-400 parts by weight of heat-conductive fillers, and also comprises an assistant; and the preparation method comprises the following steps: adding the assistant and the resin matrix into a stirrer, and carrying out first stirring to obtain a mixture; and adding a heat-conductive filler (2), carrying out second stirring, adding a heat-conductive filler (1), carrying out third stirring, and curing to obtain the heat-conductive gap interface material. The heat-conductive gap interface material has a small hardness, can avoid damages caused in the assembling process of microelectronic components, and can also fully fill the gaps of the microelectronic components.

Description

technical field [0001] The invention relates to a heat-conducting gap interface material and a preparation method thereof, in particular to an ultra-soft heat-conducting gap interface material and a preparation method thereof. Background technique [0002] The assembly of microelectronics is becoming more and more intensive, and its working environment is rapidly changing to high temperature. According to the data, the reliability of electronic components decreases by 10% every time the temperature rises by 2°C, and the service life at 50°C is only 1 / 6 of that at 25°C. The improvement of thermal conductivity is usually accompanied by the optimization of heat dissipation performance. Therefore, thermal gap interface materials have attracted more and more attention. It has high thermal conductivity, good elasticity, electrical insulation, and sealing, and can effectively fill the gap between the interfaces, remove the air between the hot and cold interfaces, and increase the ...

Claims

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Application Information

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IPC IPC(8): C08L83/07C08K3/22C08K3/08C08K3/38C08K3/28C08K3/04C09K3/10
Inventor 不公告发明人
Owner SHENZHEN DARBOND INTERFACE MATERIALS
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