Fabry-Perot cavity and outer-cavity semiconductor laser

Abstract

The invention discloses a Fabry-Perot cavity and an outer-cavity semiconductor laser, wherein the Fabry-Perot cavity comprises a cavity body and a coupling prism, incident beams are irradiated into the inside of the cavity body in an evanescent-wave mode through the coupling prism, after the incident beams are totally reflected by a first reflecting surface, the incident beams are rightly irradiated on a second reflecting surface, after the incident beams are reflected by the second reflecting surface, the incident beams go back to the first reflecting surface, after the incident beams are totally reflected by the first reflecting surface, the incident beams go back to a coupling surface, total inflection is achieved at the position of the coupling surface, transmission beams of the evanescent-wave manner are produced, the beams through the total reflection of the coupling surface are irradiated on the second reflecting surface, after the beams are reflected by the second reflecting surface, the beams go back to the coupling surface, the beams through the total connection of the coupling surface, the beams are irradiated on the first reflecting surface again to carry out the total reflection, and the transmission beams are irradiated along in the direction which is collinear with and opposite to the direction of the incident beams. According to the Fabry-Perot cavity and the outer-cavity semiconductor laser, the problems that the Fabry-Perot cavity is poor in stability and easily suffers external disturbance, the size is oversize, and the system is complex are solved, meanwhile, laser mode jumping is avoided, and laser output of narrow line width is obtained.

Description

technical field [0001] The invention relates to the laser field, in particular to a Fabry-Perot cavity and an external cavity semiconductor laser. Background technique [0002] External cavity semiconductor lasers are important laser light sources in scientific research and industry. However, the output spectral line of the usual external cavity semiconductor laser is very wide, generally reaching hundreds of kilohertz or even several megahertz, which is far from the application requirements of many occasions. In order to obtain laser output with a narrow linewidth, one of the existing technologies currently used is to use an optical feedback method to inject a laser beam with a wider linewidth into a separately controllable Fabry-Perot cavity, and use the Fabry-Perot The laser beam transmitted by the Li-Perot cavity is fed back into the semiconductor laser tube, so as to realize the narrowing of the laser line width. [0003] Specific details of the prior art on optical f...

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Problems solved by technology

[0004] However, this solution has the following obvious defects: In the locking mode, since the above-mentioned external resonant cavity is easily disturbed by external vibration and external noise, the resonant frequency of the external cavity will be unstable

These defects are not conducive to the realization of laser linewidth narrowing

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