Plasma enhanced chemical vapor deposition (PECVD) device

Abstract

The invention discloses a plasma enhanced chemical vapor deposition (PECVD) device which comprises a process cavity, and a bearing rack, cooling vapor chambers and at least one reaction chamber which are arranged in the process cavity, wherein the multiple vapor chambers are arranged on the bearing rack in a layered arrangement mode along the vertical direction; the reaction chamber is horizontally arranged between two adjacent vapor chambers; and the vapor chambers are arranged on the upper and lower sides of each reaction chamber. The vapor chambers are arranged on the upper and lower sides of each reaction chamber; due to the uniform heating and isolating functions of the vapor chambers, the heat radiation interference between the reaction chambers is eliminated, and the temperature consistency in each reaction chamber is guaranteed; and meanwhile, the cooling vapor chamber has the cooling effect, the temperature of the process cavity is prevented from being extremely high, and the sealing structure of the process cavity is protected, so that the temperature of the process cavity is prevented from being extremely low, and the waste of heating energy is avoided.

Description

technical field [0001] The invention relates to the field of vacuum coating, in particular to a PECVD device. Background technique [0002] Plasma Enhanced Chemical Vapor Deposition (PECVD) technology is a technology that uses plasma discharge to generate charged particles, free radicals, active groups and other substances to undergo chemical reactions on the substrate surface to deposit thin films. Because the plasma stimulates the activity of the reactive gas molecules, the temperature of the deposition film process becomes lower, and the deposition rate is fast, the grown film has good compactness, less defects, and good process repeatability, so it is widely used. It was first used in the semiconductor chip processing industry to deposit silicon oxide and silicon nitride films; in recent years, with the vigorous development of liquid crystal flat panel display technology and solar photovoltaic industry, PECVD technology is used to prepare thin-film transistors (Thin-Film...

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Problems solved by technology

[0003] PECVD equipment in the existing mainstream technology has the following problems: 1) When it is used to prepare thin films on large-area substrates, the gas enters from one side of the reaction chamber and is drawn out from the other side, so the uniformity of the gas flow is very poor; 2) The reaction chamber can Separate heating is used, but due to the stacked arrangement of multiple reaction chambers, the temperature of the top process reaction chamber is bound to be higher than that of the bottom reaction chamber, resulting in poor temperature consistency among the reaction chambers; 3) The reaction chambers are fixed separately On the inner wall of the vacuum chamber, the gap between each other is very small, which makes the later maintenance complicated, time-consuming and difficult; 4) Multiple reaction chambers are arranged in the same vacuum chamber, resulting in the whole device being very heavy and sometimes weighing several tons. It is very inconvenient for post-maintenance and maintenance personnel to operate, and there are potential safety hazards

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