Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Preparation method and application of boron-composition-cladded silicon nano paste

A nano-slurry and silicon-coated technology, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems of P-type battery attenuation, battery power generation capacity decline, etc., to achieve enhanced bonding The effect of uniform particle size distribution and high boron doping concentration

Active Publication Date: 2013-09-04
宁波革鑫新能源科技有限公司
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Light-induced attenuation of P-type batteries, resulting in a decrease in battery power generation capacity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method and application of boron-composition-cladded silicon nano paste
  • Preparation method and application of boron-composition-cladded silicon nano paste
  • Preparation method and application of boron-composition-cladded silicon nano paste

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Using a high-energy ball mill to grind the silicon raw material for 4 hours to obtain small silicon particles of 20 microns. right figure 1 The system shown was evacuated and then filled with argon. After several cycles, the system is argon atmosphere. Adjust the working gas pressure of the system between 0.1-0.5MPa; turn on the power supply of the plasma generator, the power is 100 kilowatts, the frequency is 10 MHz, and the voltage and current are adjusted in the range of 100-200V and 50-200A respectively, so that the plasma The body torch is stable; start the powder feeder, and use the argon flow to bring micron-sized silicon particles into the plasma torch chamber at a speed of 600 grams of silicon powder per hour. At the same time, the cooling gas is introduced from the inlet of the wind screen, and the circulating cooling water device is turned on. Control the cooling chamber temperature 60-90 o c. Micron-sized silicon powder forms nano-silicon particles thr...

Embodiment 2

[0035] Using a high-energy ball mill to grind the silicon raw material for 4 hours to obtain small silicon particles of 20 microns. right figure 1 The system shown was evacuated and then filled with argon. After several cycles, the system is argon atmosphere. Adjust the working gas pressure of the system between 0.1-0.5MPa; turn on the power supply of the plasma generator, the power is 100 kilowatts, the frequency is 10 MHz, and the voltage and current are adjusted in the range of 100-200V and 50-200A respectively, so that the plasma The body torch is stable; start the powder feeder, and use the argon flow to bring micron-sized silicon particles into the plasma torch chamber at a speed of 600 grams of silicon powder per hour. At the same time, the cooling gas is introduced from the inlet of the wind screen, and the circulating cooling water is turned on. Control the cooling chamber temperature 60-90 oc. Micron-sized silicon powder forms nano-silicon particles through gas...

Embodiment 3

[0037] Using a high-energy ball mill to grind the silicon raw material for 4 hours to obtain small silicon particles of 20 microns. right figure 1 The system shown was evacuated and then filled with argon. After several cycles, the system is argon atmosphere. Adjust the working gas pressure of the system between 0.1-0.5MPa; turn on the power supply of the plasma generator, the power is 100 kilowatts, the frequency is 10 MHz, and the voltage and current are adjusted in the range of 100-200V and 50-200A respectively, so that the plasma The body torch is stable; start the powder feeder, and use the argon flow to bring micron-sized silicon particles into the plasma torch chamber at a speed of 400 grams of silicon powder per hour. At the same time, the cooling gas is introduced from the inlet of the wind screen, and the circulating cooling water is turned on. Control the cooling chamber temperature 60-90 o c. Micron-sized silicon powder forms nano-silicon particles through ga...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a preparation method and application of boron-composition-cladded silicon nano paste. The preparation method comprises the following steps: 1) preparing nano silicon suspension liquid; and 2) preparing boron-containing high polymer in the nano silicon suspension liquid prepared in the step 1), and meanwhile, stirring to prepare evenly dispersed boron-containing nano silicon paste, wherein protective atmosphere is introduced during the reaction process, and the viscosity of the boron-containing nano silicon paste is 1.0-15.0PaS. The prepared boron-containing nano silicon paste is printed on the surface of a battery silicon wafer through screen printing, the line clearness is high, and no burr is generated. The silicon wafer can be selectively doped, and high and low doped areas are formed.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a preparation method and application of boron composition-coated silicon nanometer slurry. Background technique [0002] At present, almost all solar cells in crystalline silicon countries are based on P-type silicon wafers. There is usually a trace amount of boron-oxygen composition in the P-type silicon wafer. The light-induced attenuation phenomenon of the P-type battery leads to a decrease in the power generation capacity of the battery. Relatively speaking, N-type crystalline silicon has many advantages, no light-induced attenuation phenomenon, and low temperature coefficient. More importantly, due to the relationship between the asymmetric capture coefficient, the minority carrier lifetime of N-type crystalline silicon is not as harsh as that of P-type crystalline silicon on metal impurities. Therefore, the N-type battery has the advantages of low...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/22H01L31/18B82Y30/00
CPCY02P70/50
Inventor 刘国钧杨小旭蒋红彬钟朝伟沈晓东
Owner 宁波革鑫新能源科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com