Pectinate gas mixing unit and pectinate gas mixer

Abstract

The invention provides a pectinate gas mixing unit. A plurality of film coating regions are arranged, and a gas spraying component corresponds to each film coating region; each gas spraying component comprises at least two gas feeding cavities, so that two or more types of working gas which can not generate chemical reaction can be conveyed by adopting a same gas feeding cavity, and the working gas can be preliminarily mixed in the gas feeding cavity; the working gas from different gas feeding cavities is sprayed out by respective gas spraying openings; the working gas is secondarily mixed in a distance region between each gas spraying opening and a carrying plate. Different types of working gas do not generate chemical reaction during the preliminary mixing and only generate the chemical reaction in the secondary mixing, so that the pectinate gas mixing unit disclosed by the invention can reduce the chemical reaction of the working gas on a mixing gas path. Moreover, the invention also provides a pectinate gas mixer. The pectinate gas mixing units disclosed by the invention are arranged in parallel, so that the large-scale management is facilitated.

Description

technical field [0001] The invention belongs to the field of chemical vapor deposition, in particular to a comb-shaped gas mixing unit and a comb-shaped gas mixer used in chemical vapor deposition equipment. Background technique [0002] Chemical vapor deposition is a chemical technique used to produce solid materials of high purity and high performance. The semiconductor industry uses this technique to grow thin films. A typical CVD process is to expose the wafer (substrate) to one or more different precursors, and a chemical reaction or / and chemical decomposition occurs on the surface of the substrate to produce the film to be deposited. Different by-products are usually produced during the reaction process, but most of them will be taken away with the air flow instead of staying in the reaction chamber. [0003] Chemical vapor deposition technology has been widely used in the field of film coating. In the prior art, the gas mixer in the field of chemical vapor depositio...

AI Technical Summary

Problems solved by technology

Since a variety of working gases are usually used in the chemical vapor deposition process, and the above two design methods have too long a mixed gas path, because the gas is usually in a high temperature state after entering the gas mixer, and the chemical properties are not stable, so Different types of working gases are prone to chemical reactions on the mixed gas path, and ideally all working gases should react chemically on the substrate surface to form a thin film

For this reason, in order to minimize the degree of reaction of the mixed gas on the mixed gas path, the two setting methods of the central gas flow type and the air cushion floating type need to add a variety of control methods, resulting in the implementation of chemical vapor deposition technology. higher requirements

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