MOCVD (Metal Organic Chemical Vapor Deposition) equipment and heating device thereof

Abstract

The invention provides a heating device and MOCVD (Metal Organic Chemical Vapor Deposition) equipment using the heating device. The heating device comprises at least two heating areas which are spaced mutually and are used for correspondingly heating substrate trays which are arranged oppositely; the at least two heating areas are provided with heating surfaces which face to the same side; and a gap is reserved between the adjacent heating areas. The heating device is characterized in that the heating device also comprises heat-insulating plates; and the heat-insulating plates are arranged corresponding to the gaps, and are used for preventing heat radiation at one side of the heating surface from being lost through the gaps. The invention also provides the MOCVD equipment with the heating device so as to solve the problems that when the thin-film deposition is carried out on the substrate trays positioned on the heating device during the vapor deposition process, the local temperature of the substrate trays is overlow to cause non-uniform heating of the substrate trays and further cause non-uniform film-layer thickness.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and more specifically relates to a heating device for MOCVD equipment and MOCVD equipment thereof. Background technique [0002] Metal-organic Chemical Vapor Deposition (MOCVD for short) is a key technology for preparing compound semiconductor thin films. MOCVD uses organic compounds of Group III and II elements and hydrides of Group V and VI elements as raw materials for crystal growth, and performs vapor phase epitaxy on the substrate by thermal decomposition reaction to grow various III-V, II- Thin-layer single-crystal materials of group VI compound semiconductors and their multi-component solid solutions. MOCVD equipment mainly includes several parts such as gas system, heating system, reaction chamber, detection and control system. Among them, the heating system mainly heats the substrate where the reaction occurs, and provides the temperature required for the reaction. It must m...

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Problems solved by technology

Since there is a gap 240 between adjacent heating zones 210, the heat radiated by the heating device 200 and reflected by the substrate tray 300 and the heat radiated from the heating surface side of the substrate tray 300 itself will be dissipated through the gap 240, so that the gap 240 The temperature of the corresponding area of ​​the substrate tray 300 decreases, making the overall temperature of the substrate tray 300 uneven, so that the film deposition rates in different areas of the substrate tray 300 are also different, resulting in the thickness of the organic metal film layer formed on the substrate 310 uneven

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