Cr, Tm, Ho-doped LaVO4 luminescent material and melting crystal growth method thereof

A technology for luminescent materials and crystal growth, applied in the directions of crystal growth, polycrystalline material growth, single crystal growth, etc., can solve problems such as low efficiency and limited wide application, and achieve the effects of wide application, high purity and simple preparation method

Inactive Publication Date: 2013-09-18
HEFEI JINGQIAO PHOTOELECTRIC MATERIAL
View PDF8 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, although the crystal has obtained watt-level energy output, its efficiency is low, which has become a bottleneck limiting its wider application.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Preparation of CrxTmyHozLa1-x-y-zVO4 single crystals with Cr, Tm, and Ho doping concentrations of 0.02at%, 3at%, and 0.5%, respectively:

[0018] (1) Using Tm 2 o 3 、Ho 2 o 3 , La 2 o 3 , V 2 o 5 As a raw material, carry out batching according to the following compound formula:

[0019] 0.03Tm 2 o 3 +0.005Ho 2 o 3 +0.965La 2 o 3 +V 2 o 5

[0020] 2 Tm 0.03 Ho 0.005 La 0.965 VO 4

[0021] The composition of each component of this raw material is as follows:

[0022] Cr 2 o 3 0.0078%

[0023] T m 2 o 3 2.9799%

[0024] Ho 2 o 3 0.4864%

[0025] La 2 o 3 80.9191%

[0026] V 2 o 5 15.6068%

[0027] And these raw materials are fully mixed evenly to obtain the ingredient mixture.

[0028] (2) pressing the homogeneously mixed raw material mixture into a cake shape to obtain the initial raw material for crystal growth;

[0029] (3) Put the initial raw material for crystal growth ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a Cr, Tm, Ho-doped lanthanum vanadate CrxTmyHozLa1-x-y-zVO4 luminescent material (x is more than or equal to 0.0001 and less than or equal to 0.1, y is more than or equal to 0.0001 and less than or equal to 0.1, z is more than or equal to 0.0001 and less than or equal to 0.1) and a melting crystal growth method thereof. The melting crystal growth method comprises the following steps of: carrying out sufficient mixing, press forming and high-temperature sintering on raw materials prepared in proportion to obtain an initial raw material of crystal growth; placing the initial growth raw material into a crucible, and sufficiently melting through heating to obtain an initial molten mass of melting growth; and then growing by adopting melting methods, such as a czochralski method, a bridgman-stockbarger method, a temperature-gradient method and other melting methods. The CrxTmyHozLa1-x-y-zVO4 can be used as a luminescent display material, a laser operating substance of 2 micrometers, and the like.

Description

technical field [0001] The invention relates to the field of luminescent materials and crystal growth, Cr, Tm, Ho-doped lanthanum vanadate Cr x T m y Ho z La 1 -y-z VO 4 , and their melt crystal growth method. Background technique [0002] With the development of LD pumping technology, Tm, Ho double doping has become the main doping method of 2 μm band laser crystals, among which Tm, Ho: YAG is one of the most commonly used crystals at present. At present, although the crystal has obtained watt-level energy output, its efficiency is low, which has become a bottleneck limiting its wider application. Therefore, it is an important issue to explore new Tm, Ho doped laser crystals with excellent performance. LaVO4 has stable chemical characteristics and excellent physical properties, and CrxTmyHozLa1-x-y-zVO4 has good luminescent properties. At the same time, under the flash lamp pumping, the broadband absorption of Cr is conducive to improving the absorption efficiency...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/30
Inventor 林鸿良陈俊
Owner HEFEI JINGQIAO PHOTOELECTRIC MATERIAL
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap