Stealth cutting LED (light emitting diode) chip and manufacture method thereof

Abstract

The invention discloses a stealth cutting LED (light emitting diode) chip, which comprises a substrate, a luminescence epitaxial layer and a reflection layer, wherein the luminescence epitaxial layer and the reflection layer are grown on the surface of the substrate; the luminescence epitaxial layer and the reflection layer are respectively positioned on two sides of the substrate; the substrate is provided with a first surface and a second surface opposite to the first surface; the luminescence epitaxial layer is formed on the first surface; the reflection layer is formed on the second surface; the reflection layer is a metal layer or an alloy layer; and the reflection layer is also attached with a total reflection membrane. The manufacture method for the stealth cutting LED chip comprises the following manufacture steps: forming the luminescence epitaxial layer on the first surface of the substrate; forming a channel favorable for the stealth cutting to penetrate through the substrate on the luminescence epitaxial layer; causing the luminescence epitaxial layer to form respectively independent luminescence chips of which the substrates are connected; forming the reflection layer on the second surface of the substrate; forming a modification layer in the substrate in a stealth cutting mode; applying external force to the substrate; dividing the substrate into the respectively independent luminescence chips of which the substrates are separated.

Description

technical field [0001] The invention relates to a stealth-cut LED chip and a structure for making the stealth-cut LED chip. Background technique [0002] The core part of a light-emitting diode is a wafer composed of a P-type semiconductor and an N-type semiconductor. There is a transition layer between the P-type semiconductor and the N-type semiconductor, which is called a P-N junction. In the PN junction of some semiconductor materials, when the injected minority carriers recombine with the majority carriers, the excess energy will be released in the form of light, thereby directly converting electrical energy into light energy. When a reverse voltage is applied to the PN junction, it is difficult for minority carriers to inject, so it does not emit light. This kind of diode made using the principle of injection electroluminescence is called light-emitting diode, commonly known as LED. When it is in the forward working state (that is, the forward voltage is applied to b...

AI Technical Summary

Problems solved by technology

[0009] The object of the present invention is to provide a stealth cutting LED chip and its manufacturing method, in order to solve the problem that the stealth cutting laser cannot penetrate due to the reflective layer on the back in the existing stealth cutting technology

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