Insulated heat-conducting substrate with high reliability

An insulating and heat-conducting substrate, insulating and heat-conducting technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., to achieve the effects of low thermal stress, good reliability, and good adhesion

Active Publication Date: 2013-09-25
杭州锐河科技有限公司
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, on cooling the copper layer shrinks more than the ceramic due to the difference in

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0014] The high-reliability insulating and heat-conducting substrate described in this embodiment includes an aluminum base, an amorphous aluminum transition layer is deposited on the base, and an AlON insulating and heat-conducting ceramic layer is deposited on the aluminum transition layer by PECVD. The copper foil is brazed on the insulating and heat-conducting ceramic layer through an active brazing process. The thickness of the amorphous aluminum transition layer is 200 nm, and it is prepared by a radio frequency sputtering process, the target material is an aluminum target with a purity of 99.99%, the sputtering gas is Ar, the sputtering power is 1.0 kW, and the radio frequency 13.56MHz, the working pressure is 3×10 -3 torr, the substrate temperature is 25°C. The thickness of the insulating and heat-conducting ceramic layer is 200 um. Described PECVD method, its reaction system is AlCl 3 -N 2 O-NH 3 -H 2 , the reaction temperature is 300℃, the working pressure is ...

Embodiment 2

[0016] The high-reliability insulating and heat-conducting substrate described in this embodiment includes an aluminum base, an amorphous aluminum transition layer is deposited on the base, and an AlON insulating and heat-conducting ceramic layer is deposited on the aluminum transition layer by PECVD. The copper foil is brazed on the insulating and heat-conducting ceramic layer through an active brazing process. Wherein, the thickness of the amorphous aluminum transition layer is 100nm, and it is prepared by a radio frequency sputtering process, the target material is an aluminum target with a purity of 99.99%, the sputtering gas is Ar, the sputtering power is 0.5kW, and the radio frequency The frequency is 13.56MHz, and the working pressure is 5×10 -3 torr, the substrate temperature is 50°C. By depositing an amorphous aluminum transition layer, the adhesion between the insulating and heat-conducting ceramic layer and the aluminum substrate can be significantly enhanced, and...

Embodiment 3

[0018] The high-reliability insulating and heat-conducting substrate described in this embodiment includes an aluminum base, an amorphous aluminum transition layer is deposited on the base, and an AlON insulating and heat-conducting ceramic layer is deposited on the aluminum transition layer by PECVD. The copper foil is brazed on the insulating and heat-conducting ceramic layer through an active brazing process. The thickness of the amorphous aluminum transition layer is 500 nm, and it is prepared by a radio frequency sputtering process, the target material is an aluminum target with a purity of 99.99%, the sputtering gas is Ar, the sputtering power is 1.2 kW, and the radio frequency 13.56MHz, the working pressure is 5×10 -3 torr, the substrate temperature is 25°C. The thickness of the insulating and heat-conducting ceramic layer is 500 um. In the described PECVD method, the reaction system is AlCl 3 -N 2 O-NH 3 -H 2 , the reaction temperature is 300℃, the working press...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to an insulated heat-conducting substrate with high reliability. The insulated heat-conducting substrate comprises an aluminum or aluminum alloy base body which is deposited with an amorphous aluminum transition layer. The aluminum transition layer is deposited with an AlON insulated heat-conducting ceramic layer through a PECVD method. According to the insulated heat-conducting ceramic layer, a copper foil is welded on the insulated heat-conducting ceramic layer through active brazing process. The insulated heat-conducting substrate with high reliability in the invention has good heat conducting insulation performance, and the heat conducting coefficient is larger than or equal to 100W/mk; the adhesion between layers of the substrate is good, the thermal stress is low, and the reliability is good; and the insulated heat-conducting substrate can be used as a substrate of an electronic component with high integration.

Description

technical field [0001] The invention belongs to the technical field of electronic device preparation, and more specifically, the invention relates to a high-reliability insulating and heat-conducting substrate. Background technique [0002] With the improvement of the integration level of electronic devices, the requirements for the substrate are also getting higher and higher. At present, the conductive circuit substrate of electronic products is made on a resin substrate or a metal substrate after insulation and heat conduction treatment. In order to improve its heat dissipation, heat sinks such as aluminum or copper heat sinks are further installed under the conductive circuit substrate. Moreover, the thermally conductive adhesive used for the connection between the conductive circuit substrate and the heat sink will become the bottleneck of the heat dissipation performance of high-power electronic components in the future. [0003] In order to further improve the therma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L23/14H01L23/373H01L21/48
Inventor 梁栌伊
Owner 杭州锐河科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap