Semiconductor device and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., can solve the problems of reduced device yield, difficult to clean, and reduced Schottky characteristics, and achieve the effect of improving the cut-off withstand voltage
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no. 1 approach ）
[0047] First, a first embodiment will be described. Figure 1A is a plan view showing the structure of the semiconductor device (Schottky barrier diode) of the first embodiment, Figure 1B is along Figure 1A The cross-sectional view of line II in .
[0048] In the first embodiment, if Figure 1A as well as Figure 1B As shown, a Schottky electrode 2 is formed on the semiconductor layer 1 . In addition, an ohmic electrode 3 is formed on the back surface of the semiconductor layer 1 . The Schottky electrode 2 includes a metal film 2 a including a metal in Schottky junction with the semiconductor layer 1 , and a nitride film 2 b formed around the metal film 2 a and in a Schottky junction with the semiconductor layer 1 . A nitride of the metal contained in the metal film 2 a is contained in the nitride film 2 b. That is, a substance having a lower work function than that contained in the metal film 2 a is contained in the nitride film 2 b.
[0049] In the first embodiment thu...
no. 2 approach ）
[0052] Next, a second embodiment will be described. Figure 3A is a cross-sectional view showing the structure of the semiconductor device (Schottky barrier diode) according to the second embodiment, showing along Figure 1A The profile of the line I-I in.
[0053] In the second embodiment, as Figure 3A As shown, a high-resistance region 4 is formed in a portion of the semiconductor layer 1 that is bonded to the nitride film 2b. The resistance of the high-resistance region 4 is higher than the resistance of the portion of the semiconductor layer 1 joined to the metal film 2 a. Other configurations are the same as those of the first embodiment.
[0054] In the second embodiment thus constituted, since the high-resistance region 4 exists, the diffusion of the depletion layer is larger when a reverse bias voltage is applied. Therefore, if Figure 3B As shown, even if the height of the Schottky barrier is about the same as that of the first embodiment, the change of the condu...
no. 3 approach ）
[0056] Next, a third embodiment will be described. Figure 4 It is a cross-sectional view showing the structure of the semiconductor device (Schottky barrier diode) of the third embodiment.
[0057] In the third embodiment, if Figure 4 As shown, an n-type GaN layer 11b is formed on an n-type GaN substrate 11a. In the GaN substrate 11a, for example, 5×10 17 cm -3 Si. In the GaN layer 11b, for example, 1×10 16 cm -3 Si. The thickness of the GaN layer 11 b is, for example, about 1 μm. The GaN substrate 11 a and the GaN layer 11 b are included in the semiconductor layer 11 .
[0058] A passivation film 15 is formed on the GaN layer 11b. An opening 15 a for an anode electrode is formed in the passivation film 15 . A silicon nitride film having a thickness of about 400 nm is formed as the passivation film 15 , for example.
[0059] An anode electrode 12 (Schottky electrode) is formed in the opening 15 a. The anode electrode 12 includes a Ti film 12a in Schottky junction...
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Abstract
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