Wafer level scribing method for CIS (Cmos image sensor) product

Abstract

The invention relates to a wafer level scribing method for a CIS (Cmos image sensor) product, and belongs to the technical field of semiconductor packaging. The wafer level scribing method for the CIS product comprises the following processes: attaching a wafer (100) of the CIS product to a scribing film (400); cutting a structure except a glass layer (110) by a blade (200), and cutting the glass layer (110) by a laser (300); and performing splitting, film expansion and picking on the wafer (100) to form an independent single CIS product. The wafer level scribing method for the CIS product, provided by the invention, is high in scribing speed, good in scribing quality and low in production cost, and can be applied to a complicated product structure.

Description

Technical field [0001] The present invention involves a round -level film -grade method of a CIS product, which belongs to the semiconductor packaging technology field. Background technique [0002] Compared with the products that are encapsulated by traditional leadership, CIS IMAGE SENSOR products are compared to the traditional leading size, cheap price, and not being vulnerable to pollution during the traditional lead key packaging products.focus on.The basic structure of the image sensor is a combined structure formed by the glass and silicon through the glue key. Among them, the thickness of the glass layer of the CIS product is about 400 microns, and the thickness of the silicon base layer is about 100 microns.The combined structure of the CIS product is large, the mechanical characteristics and physical characteristics of materials are large, and the industry generally uses traditional mechanical rotation diamond sand wheel blades to cut through.There is a problem with th...

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Problems solved by technology

[0003]1. Since CIS products are small in size and relatively thick, in order to meet the cutting requirements of dicing grooves, the blades are required to be thinner, so the cutting speed is very slow, generally between 2~ 8mm / s, exceeding 10mm / s;

[0004]2. The blade cuts the glass sheet. Because the glass is brittle, the cutting edge of the glass sheet is easy to collapse, which affects the product quality;

[0005]3. Due to the large difference in the material properties of the glass sheet, silicon sheet and adhesive layer, the blade has to act on both the glass sheet and the silicon sheet, making the blade life Short, a blade generally can only cut about 100m, roughly cutting 2~4pcs of 8inch wafers, in order to ensure the output, in the actual mass production, it is necessary to set up multiple dicing equipment and need to replace the blade frequently, the consumption of consumables is large, resulting in higher production costs;

[0006]4. For CIS products with silicon-glass-silicon multi-layer structure, the traditional production process is used to produce the required consumables, such as diaphragms and blades, and the consumption needs to double times, and as the complexity of the product structure increases, the product yield rate decreases accordingly

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