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Terminal guard ring and manufacturing method thereof

A terminal protection ring and limiting ring technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as poor device reliability and uniform distribution of unfavorable electric fields, and improve high-voltage characteristics, reliability, electric field, etc. The effect of uniform distribution and improved diffusion length

Inactive Publication Date: 2013-10-23
上海永电电子科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The inventors of the present invention have found that the current N-type field-limiting ring is formed on the surface of the device, usually within 0.5um. This type of field-limiting ring is not conducive to the uniform distribution of the electric field because the PN junction interface is concentrated on the surface, so The reliability of the device is relatively poor

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  • Terminal guard ring and manufacturing method thereof
  • Terminal guard ring and manufacturing method thereof
  • Terminal guard ring and manufacturing method thereof

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Embodiment Construction

[0024] In the following description, many technical details are proposed in order to enable readers to better understand the application. However, those skilled in the art can understand that without these technical details and various changes and modifications based on the following implementation modes, the technical solution claimed in each claim of the present application can be realized.

[0025] In order to make the purpose, technical solution and advantages of the present invention clearer, the following will further describe the implementation of the present invention in detail in conjunction with the accompanying drawings.

[0026] In the present invention, the same reference numerals in different drawings represent the same or similar components.

[0027] The first embodiment of the present invention relates to a terminal protection ring. figure 2 is a schematic diagram of the structure of the terminal protection ring.

[0028] Specifically, as figure 2 As shown...

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Abstract

The invention relates to the field of semiconductor devices and discloses a terminal guard ring and a manufacturing method of the terminal guard ring. The terminal guard ring comprises at least one set of composite field limiting ring on a semiconductor substrate; each set of composite field limiting ring comprises at least one N type field limiting ring and at least one P type field limiting ring; at least one side of each P type field limiting ring is connected with one N type field limiting ring to form a PN junction; the deepness of each N type field limiting ring is greater than one third of that of the P type field limiting ring connected with the N type field limiting ring. The N type field limiting rings are deeper, the doping concentration distribution is gentler, the areas of the PN junctions are larger, and the distribution of the electric fields on the surfaces of the field limiting rings is more uniform, so that the high-voltage property and the reliability of the device are improved.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a terminal protection ring technology. Background technique [0002] As global warming becomes more and more serious, the human demand for green energy is increasing, and the importance of power semiconductor devices is also becoming more prominent. In recent years, power semiconductor device technology has developed rapidly. The terminal guard ring structure is an important part of power semiconductor devices. The main function of the terminal protection ring is to bear the lateral electric field of the device and ensure the withstand voltage of the power semiconductor device. There are two main challenges in the design of the terminal guard ring: 1) reducing the area of ​​the terminal guard ring is beneficial to reduce the production cost of the device; 2) optimizing the electric field distribution at the terminal guard ring to make the potential evenly distributed, which...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L21/02
Inventor 张栋黄国华王明杰吕国琦
Owner 上海永电电子科技有限公司