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A kind of light-emitting diode and its preparation method

A technology of light-emitting diodes and light-emitting layers, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of poor conductivity of GaN, low luminous efficiency, poor quality of p-type GaN ohmic contact layer, etc., and improve external quantum efficiency , reduce ohmic contact resistance, and improve the overall electrical characteristics

Active Publication Date: 2015-12-02
SOUTHEAST UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0007] Purpose of the invention: In order to overcome the deficiencies in the prior art, the present invention provides a light-emitting diode and its preparation method, which solves the problems of the p-type GaN ohmic contact layer caused by the poor conductivity of undoped GaN in the prior art. The problem of poor quality, while solving the problem of low luminous efficiency

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  • A kind of light-emitting diode and its preparation method
  • A kind of light-emitting diode and its preparation method
  • A kind of light-emitting diode and its preparation method

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Embodiment Construction

[0025] The present invention will be further described below in conjunction with the accompanying drawings.

[0026] like figure 1 Shown: a light-emitting diode with a new structure, including a substrate 101, a low-temperature AlN nucleation layer 102, a buffer layer 103, an n-type AlGaN layer 104, a multi-quantum well active light-emitting layer 106, and a p-type The AlGaN electron blocking layer 107, the p-type AlGaN layer 108 and the composite p-type GaN ohmic contact layer 109, the top surface of the composite p-type GaN ohmic contact layer 109 is provided with a p-type electrode 110, and the n-type AlGaN layer 104 A stepped mesa is etched, the extension of the stepped mesa is connected to the bottom surface of the multi-quantum well active light-emitting layer 106 , and an n-type electrode 105 is arranged on the stepped mesa.

[0027] like figure 2 As shown: the composite p-type GaN ohmic contact layer 109 includes a δ-doped P-type GaN layer of Mg and a uniformly dope...

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Abstract

The invention discloses a light emitting diode and a preparation method of the light emitting diode. The quality of a p-type ohmic contact layer can be improved to a certain extent to increase the external quantum efficiency by taking a Mg uniformly doped p-type GaN layer as a final coverage layer of Mg delta-doped p-type GaN in place of a non-doped GaN layer, and higher hole concentration can be obtained to increase the composite light emitting efficiency of an electron hole and the ohmic contact resistance can also be reduced to realize better integral electrical properties of the light emitting diode through a composite p-type GaN ohmic contact layer consisting of the Mg delta-doped P-type GaN layer and the Mg uniformly doped P-type GaN layer.

Description

technical field [0001] The invention relates to the field of semiconductor lighting, in particular to a light emitting diode and a preparation method thereof. Background technique [0002] With the rapid development of LED technology and the continuous improvement of LED chip luminous efficiency and packaging technology, the huge application value of short-wavelength ultraviolet LED (UV-LED) has attracted people's attention in recent years, and has become a global semiconductor optoelectronic device research field. and investment hotspots. UV-LED is a newly developed solid-state light source. Its spectral band is concentrated in the ultraviolet range. Compared with traditional ultraviolet light sources, it has unique advantages, including low power consumption, fast luminous response, high reliability, high radiation efficiency, and long life. Long, no pollution to the environment, compact structure and many other advantages, it is very hopeful to replace the existing ultra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/40H01L33/00
Inventor 张雄曾振华崔一平
Owner SOUTHEAST UNIV