Unlock instant, AI-driven research and patent intelligence for your innovation.

Quantum well structure capable of realizing emission of light with wavelength close to 1.3 micrometer on GaAs substrate and preparation method of quantum well structure

A quantum well, inxga1-xas1-ybiy technology, applied in lasers, phonon exciters, laser parts and other directions, can solve the problem of restricting the emission wavelength of quantum wells, and achieve the effect of easy control and simple operation process

Inactive Publication Date: 2013-10-23
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, GaAs substrates are more mature than InP substrates, with better performance, larger substrate size, and cheaper prices; and the temperature characteristics of quantum wells and laser structures on GaAs substrates will be better than InP substrates Therefore, for many years, people have been pursuing the ability to prepare lasers near 1.3 microns on GaAs substrates, and they have obtained structures such as quantum dots, dilute nitrogen quantum wells, or heterogeneous quantum wells on virtual pseudo-substrates. implementation, but these implementation methods have certain limitations
However, lasers prepared by conventional InGaAs strained quantum wells are limited by the critical thickness of the quantum well thickness and the In composition, which restricts the emission wavelength of the quantum wells. The longest lasing wavelength of the laser at room temperature is only 1.24 microns.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum well structure capable of realizing emission of light with wavelength close to 1.3 micrometer on GaAs substrate and preparation method of quantum well structure
  • Quantum well structure capable of realizing emission of light with wavelength close to 1.3 micrometer on GaAs substrate and preparation method of quantum well structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Al on GaAs substrate 0.2 Ga 0.8 As / In 0.5 Ga 0.5 As 0.99 Bi 0.01 The preparation process of three quantum wells is taken as an example to illustrate the quantum well structure and preparation method for realizing 1.3 micron light emission on a GaAs substrate as follows:

[0021] (1) First grow a 100nm GaAs buffer layer on the GaAs substrate, and then grow a 10nm Al 0.2 Ga 0.8 As barrier layer;

[0022] (2) Keep the Ga and As beam source furnace shutters open, close the Al beam source furnace shutters, and open the In and Bi beam source furnace shutters to grow 6nm thick In 0.5 Ga 0.5 As 0.99 Bi 0.01 potential well layer;

[0023] (3) Continue to repeat the growth of Al for 2 cycles 0.2 Ga 0.8 As barrier layer and In 0.5 Ga 0.5 As 0.99 Bi 0.01 potential well layer;

[0024] (4) Finally grow 10nm Al 0.2 Ga 0.8 The As potential barrier layer completes the growth of the AlGaAs / InGaAsBi triple quantum well structure.

Embodiment 2

[0026] Al on GaAs substrate 0.1 Ga 0.9 As / In 0.43 Ga 0.57 As 0.994 Bi 0.006 The preparation process of a single quantum well is taken as an example to illustrate the structure and preparation method of a quantum well that realizes 1.3 micron light emission on a GaAs substrate as follows:

[0027] (1) First grow a 100nm GaAs buffer layer on the GaAs substrate, and then grow a 10nm Al 0.1 Ga 0.9 As barrier layer;

[0028] (2) Keep the Ga and As beam source furnace shutters open, close the Al beam source furnace shutters, and open the In and Bi beam source furnace shutters to grow 8nm thick In 0.43 Ga 0.57 As 0.994 Bi 0.006 potential well layer;

[0029] (3) Finally grow 10nm Al 0.1 Ga 0.9 As barrier layer, to complete the growth of the AlGaAs / InGaAsBi single quantum well structure, its room temperature photoluminescence spectrum is as follows figure 2 As shown, the peak wavelength is 1.294 microns.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a quantum well structure capable of realizing emission of light with wavelength close to 1.3 micrometers on a GaAs substrate and a preparation method of the quantum well structure. The quantum well structure uses In<x>Ga<1-x>As<1-y>Bi<y> as the well layer materials of a quantum well and Al<z>Ga<1-z>As as barrier layer materials of the quantum well. The preparation method comprises the steps of 1) growing a GaAs buffer layer and an AlGaAs barrier layer on the GaAs substrate; 2) growing an In<x>Ga<1-x>As<1-y>Bi<y> potential well layer; 3) continuously and repetitively growing AlGaAs barrier layers and InGaAsBi potential well layers of N-1 cycles; and 4) finally growing an AlGaAs barrier layer to complete the growth of the quantum well structure. The quantum well provided by the invention can be used for obtaining light with wavelength longer than the wavelength of light obtained by using the traditional AlGaAs / InGaAs quantum well and can realize the emission of the light with the wavelength close to 1.3 micrometers. The preparation method has the advantages of simple operation process and easiness in control.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic materials and its preparation, in particular to a quantum well structure capable of emitting light near 1.3 microns on a GaAs substrate and a preparation method thereof. Background technique [0002] Lasers with emission wavelengths around 1.3 microns have important applications in fields such as optical fiber communications. Traditionally, such lasers are mainly realized through InAsP / InGaAsP multiple quantum wells on InP substrates. However, GaAs substrates are more mature than InP substrates, with better performance, larger substrate size, and cheaper prices; and the temperature characteristics of quantum wells and laser structures on GaAs substrates will be better than InP substrates Therefore, for many years, people have been pursuing the ability to prepare lasers near 1.3 microns on GaAs substrates, and they have obtained structures such as quantum dots, dilute nitrogen quantum we...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/343
Inventor 王庶民顾溢张永刚宋禹忻叶虹
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI