Forming method of semiconductor structure and forming method of transistor

Abstract

The invention provides a forming method of a semiconductor structure and a forming method of a transistor. The forming method of the semiconductor structure comprises the steps that a semiconductor substrate is provided, the semiconductor substrate is made of an insulator upper semiconductor comprising a substrate, an insulation layer and a semiconductor layer; a hard mask layer is formed on the surface of the semiconductor substrate; part of the hard mask layer is removed, the rest of the hard mask layer serves as masks, forms a plurality of openings inside the semiconductor layer, and the surface of the insulation layer is exposed out; the side walls of the openings are etched by adopting the crystal orientation anisotropism wet process, and double-layer discrete nanowires are formed; then, the rest of the hard mask layer is removed, the insulation layer between the nanowires and the substrate is removed, and the double-layer discrete nanowires are suspended above the substrate; after the rest of the hard mask layer and the insulation layer are removed, thermal annealing is conducted on the nanowires so that the cross section of each nanowire becomes round. The forming method of the semiconductor structure is low in production cost, simple in process, and suitable for large-scale production.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure and a method for forming a transistor. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher component density and higher integration. Transistors, as the most basic semiconductor devices, are currently being widely used. Therefore, as the component density and integration of semiconductor devices increase, the gate size of transistors is also getting shorter and shorter. However, the shortening of the gate size of the transistor will cause the short-channel effect of the transistor, thereby generating leakage current, and ultimately affecting the electrical performance of the semiconductor device. [0003] In order to overcome the short channel effect of the transistor and suppress the leakage current, the prior art...

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Problems solved by technology

[0014] The problem to be solved by the present invention is to provide a method for forming a semiconductor structure and a method for forming a transistor, so as to solve the problem of complex process and excessive production cost when forming a gate-enclosed nanowire transistor with a double-layer nanowire semiconductor structure in the prior art. high problem

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