Light-emitting diode semiconductor layer having dielectric material layer and method for producing same
A dielectric material layer, light-emitting diode technology, applied in the direction of semiconductor devices, circuits, electrical components, etc., can solve the problems of limited light extraction efficiency and limited methods of coarsening, reducing total reflection and increasing external quantum efficiency. Effect
Inactive Publication Date: 2013-10-30
FORMOSA EPITAXY INCORPORATION
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[0006] However, the disadvantage of the prior art is that the roughening method is limited by the lithography process, which limits the shape of the roughened pattern to regular patterns such as so-called circles, squares, and strips. The benefit of light extraction is limited, so it is necessary to conceive and implement a light-emitting diode that can produce a high distribution density and maximize the photon scattering effect without going through a lithography process
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[0026] The implementation of the present invention will be described in more detail in conjunction with the drawings and component symbols below, so that those skilled in the art can implement it after studying this specification.
[0027] refer to figure 1 , figure 1 It is a schematic structural diagram of a semiconductor layer with a dielectric material layer in the light emitting diode of the present invention. The invention relates to a semiconductor layer with a dielectric material layer of a light emitting diode, which at least includes a semiconductor layer 1, and the material of the semiconductor layer 1 can be an elemental semiconductor, a compound semiconductor or other suitable semiconductor materials. The compound semiconductor can use binary, ternary or quaternary III-V (III-IV) group compound semiconductor materials, such as gallium arsenide (GaAs), gallium nitride (GaN) and other compound semiconductors.
[0028] The semiconductor layer 1 has a roughened layer...
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The invention provides a light-emitting diode semiconductor layer having a dielectric material layer and a method for producing the same so as to improve external quantum efficiency. The light-emitting diode semiconductor layer having the dielectric material layer at least contains a semiconductor layer. The semiconductor layer is externally included with a coarsening layer which has a plurality of interval regions. Each interval region has at least one dielectric material layer and the at least one dielectric material layer is in an inverted pyramid shape. Parts of the at least one dielectric material layer should be exposed out of the coarsening layer. By utilizing the dielectric material layer as a scattering interface of light, probability of photons emitted from an emitting layer emitting out of the light-emitting diode is increased with the help of the scattering effect of the dielectric material layer and oblique cutting-shaped inner side faces of the interval regions, so that occurrence probability of total reflection is reduced and the purpose of improving the external quantum efficiency is achieved.
Description
technical field [0001] The invention relates to a semiconductor layer with a dielectric material layer of a light-emitting diode and a manufacturing method thereof, in particular to a light-emitting diode capable of reducing total reflection and improving external quantum efficiency. Background technique [0002] Gallium Nitride (GaN)-based light-emitting diodes, because light-emitting diodes of various colors can be produced by controlling the composition of materials, its related technologies have become the focus of active research and development in the industry and academia in recent years. One of the key points of academic and industry research on GaN-based light-emitting diodes is to understand the light-emitting characteristics of GaN-based light-emitting diodes, and then propose methods to improve their luminous efficiency and brightness. This high-efficiency and high-brightness gallium nitride-based light-emitting diode will be effectively used in outdoor display b...
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IPC IPC(8): H01L33/22
Inventor 林文禹武良文
Owner FORMOSA EPITAXY INCORPORATION