Array substrate, manufacturing method thereof and display device

Abstract

The invention provides an array substrate, a manufacturing method thereof and a display device, and belongs to the display technical field. An active layer of the array substrate comprises at least two metal-oxide semiconductor layers, wherein the mobility ratio of a first metal-oxide semiconductor layer close to a gate insulation layer is larger than that of a second metal-oxide semiconductor layer close to a source drain metal layer. According to the technical scheme, the active layer which is stable, good in performance and high in mobility ratio can be manufactured.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a manufacturing method thereof, and a display device. Background technique [0002] With the continuous advancement of technology, users' demand for liquid crystal display equipment is increasing, and TFT-LCD (Thin Film Transistor-Liquid Crystal Display, Thin Film Field Effect Transistor Liquid Crystal Display) has also become the mainstream display used in mobile phones, tablet computers and other products . In addition, with the popularization of display devices, users' demand for large-size display products is becoming more and more common. [0003] The performance of TFT determines the display quality of LCD. Amorphous silicon is often used as the active layer in mass production, but amorphous silicon has many defects and low mobility. The actual carrier mobility of amorphous silicon TFT is about 10cm 2 / (V*s), but because there are too many d...

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Problems solved by technology

The actual carrier mobility of amorphous silicon TFT is about 10cm 2 / (V*s), but because there are too many defects, most of the charges attracted by the gate electrode are captured in the defects and cannot provide conductivity, so that the equivalent carrier mobility is only less than 1cm 2 / (V*s), cannot meet the needs of large-size display products

[0004] In order to improve the mobility of the active layer, the existing technology uses metal oxide semiconductors to make the active layer, but the mobility of some metal oxide semiconductors is not high enough, and some metal oxide semiconductors have relatively high mobility, but the drain If the current is relatively large, it will affect the performance of the TFT and cause the display to fail to display normally.

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