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Preparation method of polysilicon ingot

A technology of polysilicon and ingot casting, which is applied in the field of preparation of polysilicon ingots. It can solve the problems of uneven crystal grains, polysilicon crystal defects and many grain boundaries, and small average size of polysilicon, so as to achieve uniform distribution of crystal grains and high conversion efficiency. Effect

Active Publication Date: 2016-03-23
TIANJIN YINGLI NEW ENERGY RESOURCES
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Problems solved by technology

However, the average size of the polysilicon grains prepared by it is relatively small, and the grains are uneven, resulting in many crystal defects and grain boundaries of polysilicon, resulting in poor quality of silicon ingots

Method used

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  • Preparation method of polysilicon ingot

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preparation example Construction

[0024] The invention provides a kind of preparation method of polysilicon ingot, comprises the following steps:

[0025] A) Spray the silicon nitride aqueous solution on the inner wall of the hot crucible, and then spray the mixed aqueous solution of silicon nitride and silicon powder on the bottom of the hot crucible;

[0026] B) baking the hot crucible obtained in step A) to obtain a charging crucible;

[0027] C) Putting silicon material into the charging crucible for ingot production to obtain a polysilicon ingot.

[0028] The invention provides a method for preparing a polysilicon ingot. The aqueous solution of silicon nitride is uniformly sprayed on the bottom and surroundings of a hot crucible, and then the mixed aqueous solution of silicon nitride and silicon powder is evenly sprayed on the bottom of the hot crucible. Then the above-mentioned hot crucible is baked to obtain a charging crucible, and finally the charging crucible is filled with silicon material for ingo...

Embodiment 1

[0044] First, add 550g of silicon nitride into 2200ml of pure water, stir evenly to obtain 2750g of silicon nitride aqueous solution; then add 100g of silicon nitride and 100g of silicon powder into 425ml of pure water, and stir evenly to obtain a mixture of 625g of silicon nitride and silicon powder aqueous solution.

[0045] Then, select a qualified crucible with a length, width, and height of 880mm*880mm*540mm respectively, wipe and purge the inner wall of the above-mentioned crucible, and keep the inner wall clean before spraying. Heat the above-mentioned crucible and keep the temperature at 70°C, and evenly spray 2750g of the above-prepared silicon nitride aqueous solution to the surroundings and bottom of the above-mentioned heated crucible. After the step of spraying the silicon nitride aqueous solution is completed, continue to spray evenly Spray 625g of the above-prepared mixed aqueous solution of silicon nitride and silicon powder, put the sprayed hot crucible into a...

Embodiment 2

[0050] First, add 550g of silicon nitride into 3300ml of pure water, stir evenly to obtain 3850g of silicon nitride aqueous solution; then add 154g of silicon nitride and 77g of silicon powder into 385ml of pure water, and stir evenly to obtain a mixture of 616g of silicon nitride and silicon powder aqueous solution.

[0051] Then, select a qualified crucible with a length, width, and height of 880mm*880mm*540mm respectively, wipe and purge the inner wall of the above-mentioned crucible, and keep the inner wall clean before spraying. Heat the above-mentioned crucible and keep the temperature at 70°C, and evenly spray 3850g of the above-prepared silicon nitride aqueous solution to the surrounding and bottom of the above-mentioned hot crucible. After the step of spraying the silicon nitride aqueous solution is completed, continue to spray evenly Spray 616g of the above-prepared mixed aqueous solution of silicon nitride and silicon powder, put the sprayed hot crucible into a cruc...

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Abstract

The invention provides a polycrystalline silicon ingot preparation method which comprises the following steps: spraying a silicon nitride aqueous solution on the inner wall of a hot crucible, then spraying a mixed aqueous solution of silicon nitride and silicon powder at the bottom of the hot crucible, baking the hot crucible processed by the above steps to obtain the loaded crucible, finally loading silicon material in the loaded crucible, and producing the ingot to obtain the polycrystalline silicon ingot. According to the preparation method provided by the invention, the mixed aqueous solution of the silicon nitride and the silicon powder is sprayed at the bottom of the hot crucible, so that a layer of coating with the mixed silicon nitride and the silicon powder is formed at the bottom of the crucible, the silicon powder in the coating serves as a crystal nucleus formation point in the nucleation process in the production of the ingot, so that formed crystalline grains are distributed evenly. Therefore, the polycrystalline silicon ingot having relatively good quality is prepared.

Description

technical field [0001] The invention belongs to the technical field of polycrystalline silicon ingots, and in particular relates to a preparation method of polycrystalline silicon ingots. Background technique [0002] Today, when traditional energy sources are on the verge of exhaustion, solar energy, one of the new energy sources, has received much attention. As the most important raw material of solar cells, polysilicon, people's requirements for its quality and quality are gradually increasing. At present, the process flow of polysilicon ingot requires four steps: crucible spraying, crucible baking, crucible charging and ingot production. process. [0003] Crucible spraying and crucible baking are important process steps that affect crystal nucleation and crystal growth during the production of polysilicon ingots. In the production process of polycrystalline silicon ingots, in order to prevent the molten silicon from reacting with the quartz ceramic crucible and easy t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/06C30B28/06B05D7/24B05D3/02
Inventor 刘华张小建王悦王丙宽屈涛
Owner TIANJIN YINGLI NEW ENERGY RESOURCES
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