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Method for preparing copper-aluminum-sulfur film

A copper-aluminum-sulfur and thin-film technology, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, electrical components, etc., can solve the problems of complex process routes and high production costs, and achieve low equipment requirements, low production costs, and easy operation Effect

Inactive Publication Date: 2013-12-18
SHANDONG JIANZHU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the low cost of raw materials, it is a very promising photoelectric thin film material, but the existing process route is complicated and the production cost is high, so it is also necessary to explore a low-cost preparation process

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] a. Cleaning of the glass substrate: The glass substrate (size 2mm×2mm) was cleaned as described above.

[0027] b. Add 1.0 part of CuCl 2 2H 2 O, 2.200 parts Al(NO 3 ) 3 9H 2 O and 0.896 CH 4 N 2 Put S into a glass bottle, add 39.789 parts of deionized water and 26.526 parts of ammonia water, and use ultrasonic vibration for more than 30 minutes to mix the substances in the solution evenly.

[0028] c. Drop the above solution onto the glass substrate placed on the homogenizer, and then start the homogenizer. The homogenizer rotates at 200 rpm for 5 seconds and at 3000 rpm for 15 seconds, so that the dripped solution is coated After uniformity, the substrate was dried at 100°C, and then the above-mentioned solution was dripped and spin-coated again, and then dried again. This was repeated 10 times, and a precursor thin film sample with a certain thickness was obtained on the glass substrate.

[0029] d. Put the precursor thin film sample obtained by the above proc...

Embodiment 2

[0032] a. Cleaning of the glass substrate: The glass substrate (size 2mm×2mm) was cleaned as described above.

[0033] b. Add 1.0 part of CuCl 2 2H 2 O, 2.200 parts Al(NO 3 ) 3 9H 2 O and 0.896 CH 4 N 2 Put S into 39.789 parts of ethylene glycol and mix evenly, add hydrochloric acid until the pH is 2.5, and use ultrasonic vibration for more than 30 minutes to make the substances in the solution evenly mixed.

[0034] c. Drop the above solution onto the glass substrate placed on the homogenizer, and then start the homogenizer. The homogenizer rotates at 200 rpm for 5 seconds and at 3000 rpm for 15 seconds, so that the dripped solution is coated After uniformity, the substrate was dried at 100°C, and then the above-mentioned solution was dripped and spin-coated again, and then dried again. This was repeated 10 times, and a precursor thin film sample with a certain thickness was obtained on the glass substrate.

[0035] d. Put the precursor thin film sample obtained by the...

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Abstract

The invention relates to a method for preparing a copper-aluminum-sulfur film, and belongs to the technical field of preparation of photoelectric films. The method comprises the following steps of: firstly cleaning a glass substrate; then placing CuCl2.2H2O, Al(NO3)3.9H2O and CH4N2S into a solvent, and applying a spincoating method to obtain a precursor film on the glass substrate; drying the precursor, and placing the precursor into a closable container filled with hydrazine hydrate, wherein a precursor film sample is not contacted with the hydrazine hydrate; heating the closable container, then taking out a sample, and drying the sample to obtain the copper-aluminum-sulfur photoelectric film. The method disclosed by the invention has the advantages of no need of high-temperature vacuum condition, low requirement on equipment and instruments, easiness for operation, low production cost, high production efficiency, and the like. The obtained copper-aluminum-sulfur photoelectric film has the advantages of preferred orientation growth and better continuity and uniformity. The new process provides the production method which is low in cost and can realize industrialization for preparing the high-property copper-aluminum-sulfur photoelectric film.

Description

technical field [0001] The invention belongs to the technical field of photoelectric thin film preparation, and in particular relates to a preparation method for preparing a copper-aluminum-sulfur thin film. Background technique [0002] With the continuous development of society, the consumption of renewable resources is increasing, and the global reserves are decreasing sharply. The shortage of resources and the continuous increase of cost have caused many countries to turn their attention to the research of new energy sources. Solar energy stands out among many renewable energy sources due to its cleanness, sustainability and wide range of sources. In order to make full use of solar energy, countries all devote themselves to the research of solar cells. [0003] Copper aluminum sulfur is widely used in photovoltaic detectors, solar cells, and light-emitting diodes. Copper-aluminum-sulfur-based thin-film solar cells are currently one of the most popular optical materials...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/22H01L31/18H01L31/032
CPCY02P70/50
Inventor 李静高稳成刘科高石磊许斌
Owner SHANDONG JIANZHU UNIV
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