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Method for manufacturing silicon carbide semiconductor device

A manufacturing method and technology of silicon carbide, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of unobtained channel mobility, gate oxide film reliability, etc.

Inactive Publication Date: 2017-03-29
DENSO CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Under current conditions, sufficient channel mobility and gate oxide film reliability are not obtained

Method used

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  • Method for manufacturing silicon carbide semiconductor device
  • Method for manufacturing silicon carbide semiconductor device
  • Method for manufacturing silicon carbide semiconductor device

Examples

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no. 1 example

[0033] A first embodiment of the present disclosure will be explained. Here, an inversion type vertical MOSFET which is a transistor having a trench gate structure mounted in a SiC semiconductor device will be explained as an example.

[0034] figure 1 is a cross-sectional view of a vertical MOSFET having a trench gate structure according to the present embodiment. figure 1 Corresponds to one cell of the MOSFET taken from the device. although figure 1 Only one unit of MOSFET is shown, but with figure 1 Rows of MOSFETs of a similar structure to the MOSFETs shown in are placed next to each other.

[0035] exist figure 1 The MOSFETs shown in, are provided made of SiC N + The conductivity type substrate 1 serves as a semiconductor substrate. N + Conductivity type substrate 1 has such as 1.0×10 19 / cm 3 N conductivity type impurity concentration of nitrogen and a thickness of about 300 micrometers. in N + N made of SiC is formed on the surface of the conductivity type s...

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Abstract

A manufacturing method of a silicon carbide semiconductor device includes: forming a drift layer on a silicon carbide substrate; forming a base layer on or in a surface portion of the drift layer; forming a source region in a surface portion of the base layer; forming a trench to penetrate the base layer and to reach the drift layer; forming a gate electrode on a gate insulation film in the trench; forming a source electrode electrically connected to the source region and the base layer; and forming a drain electrode on a back surface of the substrate. The forming of the trench includes: flattening a substrate surface; and etching to form the trench after flattening.

Description

[0001] Cross References to Related Applications [0002] This application is based on Japanese Patent Application No. 2011-207181 filed on September 22, 2011, the entire contents of which are hereby incorporated by reference. technical field [0003] The present disclosure relates to a method of manufacturing a silicon carbide (ie, SiC) semiconductor device having a transistor of a vertical type trench gate structure. Background technique [0004] Conventionally, a SiC semiconductor device having a vertical type MOSFET having a vertical type trench gate structure as a transistor is disclosed (for example, Patent Document No. 1). The vertical MOSFET has the following structure: the P conductivity type base region is formed on the N - Conductivity type on drift layer, N + a conductivity type source region is formed in a surface portion of the P conductivity type base region, and a trench is formed to penetrate the N + conductivity type source region and P conductivity type ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/12H01L21/336H01L29/78
CPCH01L29/66666H01L21/3065H01L29/1608H01L29/34H01L29/4236H01L29/66068H01L29/7813
Inventor 宫原真一朗山本敏雅高谷秀史杉本雅裕渡边行彦副岛成雅石川刚
Owner DENSO CORP