Preparation method of nano-SiO2 polishing solution

A kind of polishing liquid and nanotechnology, applied in the direction of polishing composition containing abrasives, etc., can solve the problems of surface quality to be improved, low production efficiency, low polishing rate, etc., and achieve excellent polishing performance and no corrosion pits

Inactive Publication Date: 2014-01-15
SHAANXI SHENGMAI PETROLEUM
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are still some problems in the application of CMP: (1) The polishing rate is low, resulting in low production efficiency; (2) The surface quality needs to be continuously improved, and defects such as scratches, pits, and orange peel must be completely removed to increase the yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of nano-SiO2 polishing solution
  • Preparation method of nano-SiO2 polishing solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] (1) Dissolve water glass in deionized water first, then heat to obtain 5nm SiO 2 seed crystals, and then make the nano-SiO 2 The particles grow up to 110nm, followed by ultrafiltration and concentration to obtain nano-SiO 2 colloid;

[0014] (2) To nano-SiO 2 Add stabilizer, polishing regulator, and pH regulator to the colloid in turn, add deionized water to keep the solid content at 40%, stir evenly, and then filter to obtain the filtrate.

[0015] (3) Polishing is performed at a pressure of 39.2kPa, a rotational speed of 60r / min, a flow rate of polishing fluid of 1L / min, and a polishing time of 4h.

[0016] (4) The measured average polishing rate is 5.2 μm / h.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a preparation method of polishing solution. The preparation method of the nano-SiO2 polishing solution comprises the following steps: (1) dissolving water glass into deionized water, heating to obtain 5nm SiO2 seed crystals, growing the nano-SiO2 particles to 110 nm, performing ultrafiltration and concentration to obtain nano-SiO2 colloids; (2) adding a stabilizer, a polishing regulator and a pH regulator into the nano-SiO2 colloids sequentially, adding deionized water to the nano-SiO2 colloids keep the solid content of the mixed solution to be 40%, uniformly stirring, and filtering to obtain the filtrate. The prepared nano silicon dioxide polishing solution has excellent polishing performance on an LED sapphire substrate; the polished surface is free from scratches and corrosion pits and has the roughness less than 0.2 nm.

Description

technical field [0001] The invention relates to a preparation method of a polishing liquid. Background technique [0002] In the field of optoelectronics, light-emitting diodes (LEDs) have the advantages of low operating voltage, low power consumption, high efficiency, long life, solidification, fast response speed and simple driving circuit, and are recognized as the most promising high-tech field in the 21st century. one. The surface quality of sapphire has a very important impact on the performance and quality of LED devices. At present, it is required to be ultra-smooth, free of defects, and the roughness is less than Ra0.2nm. Therefore, the final polishing process has high requirements and has become one of the most important processes. [0003] Sapphire crystal material has high hardness and high brittleness. It is a typical extremely difficult material to process. Its polishing process has experienced machine polishing, bath polishing, float polishing, mechanical che...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C09G1/02
Inventor 王耀斌
Owner SHAANXI SHENGMAI PETROLEUM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap