High-light effect light emitting diode chip and preparing method thereof

Abstract

The invention discloses a high-light effect light emitting diode chip and a preparing method thereof, and relates to the technical field of semiconductors. The method comprises the step of providing a substrate, the step of developing a GaN base epitaxial wafer on the substrate, the step of preparing a boss for an exposure part N type GaN layer on the GaN base epitaxial wafer, the step of preparing protrusions or concave patterns which are arranged in an array mode on one part of the lower horizontal end face of the boss, the step of developing a transparent conducting layer on the upper horizontal end face of the boss, the step of setting an N electrode on the other part of the lower horizontal end face of the boss and setting a P electrode on the transparent conducting layer, and the step of covering a passivation layer on the exposed part of the upper surface of the transparent conducting layer, the vertical end face of the boss and the exposed part of the lower horizontal end face of the boss. By means of the technical scheme and the prepared high-light effect light emitting diode chip, the light emitted by multiple quantum wells in the GaN base epitaxial wafer can be prevented from being absorbed by the interior of the GaN base epitaxial wafer to the larger extent, and the light extraction efficiency of the light emitting diode chip is improved.

Description

Technical field [0001] The invention relates to the technical field of semiconductors, in particular to a high-light-efficiency light-emitting diode chip and a preparation method thereof. Background technique [0002] LED (Lighting Emitting Diode) is a light-emitting device that converts electrical energy into light energy and is widely used in people's daily lives. The core component of LED is LED chip. [0003] The existing LED chip includes a substrate and a GaN-based epitaxial wafer grown on the substrate. The GaN-based epitaxial wafer includes an N-type GaN layer, a multiple quantum well layer, and a P-type GaN layer that are sequentially grown upward on the substrate. The surface of the GaN-based epitaxial wafer is provided with a step that exposes part of the N-type GaN layer, a transparent conductive layer is grown on the upper horizontal end surface of the step, a P electrode is provided on the transparent conductive layer, and the lower horizontal end surface of the step...

AI Technical Summary

Problems solved by technology

[0005] Under the premise that the refractive index of the GaN-based epitaxial wafer is greater than that of air, since the surface of the N-type GaN layer of the existing GaN-based epitaxial wafer is basically a horizontal plane, the total reflection of light from the N-type GaN layer to the air is critical. The angle is small, so that the light emitted by the multi-quantum well layer in the GaN-based epitaxial wafer is easier to be reflected back, continues to propagate inside the GaN-based epitaxial wafer, and is finally completely absorbed by the GaN-based epitaxial wafer, resulting in the light emitted by the existing light-emitting diode chip. Extraction efficiency is low

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