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Method for Reducing Splash of Liquid Silicon During Electron Beam Melting of Polysilicon

An electron beam smelting, polysilicon technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of loss of silicon material, ablation of components, ablation of vacuum chamber shell, etc., to reduce the loss of silicon material , Avoid sudden pressure changes and reduce the effect of ablation

Inactive Publication Date: 2015-07-29
QINGDAO XINSHIJI SOLAR ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] In short, the impact of splashing is the loss of a large amount of silicon material on the one hand, and the ablation of the vacuum chamber shell and even the components inside the vacuum chamber on the other hand.
At the same time, the generated spatter will bring inconvenience to the regular cavity cleaning work

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] 1. Material preparation: First, take 500g of polysilicon material, wash it 4 times with deionized water, put it in a drying oven and dry it at 60°C.

[0027] 2. Vacuumizing and pretreatment: Vacuum the electron beam melting furnace to 0.0018Pa with a vacuum pump group; water-cool the bottom of the water-cooled copper crucible, and maintain the temperature at 40°C; set the high voltage to 30kV, and after 5 minutes of high-pressure preheating, turn off the high pressure , the beam current of the electron gun is set to 200mA, and after the electron gun is warmed up for 10 minutes, the beam current of the electron gun is turned off.

[0028] 3. Adjust the beam spot movement of the electron beam: adjust the beam current of the electron gun to 100mA, measure with an infrared thermometer, and keep the surface temperature of the silicon material under the electron beam irradiation at 1420°C, then start heating to melt the silicon material.

[0029] Adjust the moving speed of th...

Embodiment 2

[0034] 1. Material preparation: First, take 500g of polysilicon material, wash it 4 times with deionized water, put it in a drying oven and dry it at 60°C.

[0035] 2. Vacuumizing and pretreatment: Vacuum the electron beam melting furnace to 0.0018Pa with a vacuum pump group; water-cool the bottom of the water-cooled copper crucible, and maintain the temperature at 40°C; set the high voltage to 30kV, and after 5 minutes of high-pressure preheating, turn off the high pressure , the beam current of the electron gun is set to 200mA, and after the electron gun is warmed up for 10 minutes, the beam current of the electron gun is turned off.

[0036] 3. Adjust the beam spot movement of the electron beam: adjust the beam current of the electron gun to 180mA, measure with an infrared thermometer, and keep the surface temperature of the silicon material under the electron beam irradiation at 1500°C, then start heating to melt the silicon material.

[0037] Adjust the moving speed of th...

Embodiment 3

[0042] 1. Material preparation: First, take 500g of polysilicon material, wash it 4 times with deionized water, put it in a drying oven and dry it at 60°C.

[0043] 2. Vacuumizing and pretreatment: Vacuum the electron beam melting furnace to 0.0018Pa with a vacuum pump group; water-cool the bottom of the water-cooled copper crucible, and maintain the temperature at 40°C; set the high voltage to 30kV, and after 5 minutes of high-pressure preheating, turn off the high pressure , the beam current of the electron gun is set to 200mA, and after the electron gun is warmed up for 10 minutes, the beam current of the electron gun is turned off.

[0044] 3. Adjust the beam spot movement of the electron beam: adjust the beam current of the electron gun to 150mA, measure with an infrared thermometer, and keep the surface temperature of the silicon material under the electron beam irradiation at 1470°C, then start heating to melt the silicon material.

[0045] Adjust the moving speed of th...

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Abstract

The invention belongs to the field of electron beam smelting, and in particular relates to a method for reducing the splashing of silicon liquid in a polycrystalline silicon electron beam smelting process. The method comprises the steps of material preparation, vacuumizing, pretreatment and smelting, wherein after the pretreatment step, the following steps are performed: (1) adjusting electron beam current, and heating and melting a silicon material; (2) adjusting electron beam spots to spirally move towards the circle center of a crucible along the upper edge of the inner wall of the crucible, causing the electron beam spots to reversely spirally move after the electron beam spots move to the circle center of the crucible, and repeating the spiral movement; (3) after the movement of the electron beam spots is completed, performing electron beam smelting. The method has the remarkable effects that silicon material loss caused by the splashing of the silicon liquid can be reduced, ablation in a vacuum cavity can be reduced, the hidden danger of stopping of an electron gun in case of sudden changes in pressure in the vacuum cavity caused by the splashing of the silicon liquid can be avoided, and a process is simple and easy to operate.

Description

technical field [0001] The invention belongs to the field of electron beam smelting, and in particular relates to a method for reducing silicon liquid splashing during polysilicon electron beam smelting. Background technique [0002] In a society where energy is scarce and low-carbon environmental protection is advocated, solar energy, as an environmentally friendly new energy, has great application value. Solar cells can convert solar energy into electrical energy. Solar-grade polycrystalline silicon materials are the most important basic raw materials for manufacturing solar cells, but their high manufacturing costs and complicated manufacturing processes are the bottlenecks that restrict the development of the photovoltaic industry, which seriously hinders the development of solar cells in my country. promotion and use. [0003] At present, the main technical routes for preparing solar-grade polysilicon materials worldwide include: improved Siemens method, silane method, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/037
Inventor 王登科姜大川谭毅
Owner QINGDAO XINSHIJI SOLAR ENERGY TECH CO LTD
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