Bismuth-doped yttrium vanadate semiconductor for photocatalytic degradation of ethylene

A yttrium vanadate and semiconductor technology, applied in the field of inorganic nano-photocatalytic materials, can solve the problems that have not yet been reported, and achieve the effect of promoting practical application

Inactive Publication Date: 2014-02-19
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

According to the relevant novelty information, so far, the research work of using bismuth-doped yttrium

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Bismuth-doped yttrium vanadate semiconductor for photocatalytic degradation of ethylene
  • Bismuth-doped yttrium vanadate semiconductor for photocatalytic degradation of ethylene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Weigh 1.628g of yttrium nitrate and 0.364g of bismuth nitrate, dissolve them in 50mL of acetic acid and water mixed solution, add 5.006g of acetylacetone and 7.010g of acetylacetone and stir for 1 hour after they are completely dissolved. Weigh 0.585g of ammonium metavanadate, dissolve it in 50mL of hot aqueous solution, add it to the above solution after it is completely dissolved, heat and stir until reflux, the solution changes from light yellow to reddish brown, keep for 3 hours, and then cool to room temperature. Take an appropriate amount of the solution and place it in a vacuum constant temperature drying oven, evaporate to dryness at 60°C, grind it into powder, put it into a muffle furnace and bake it at 550°C for 3 hours to obtain a bismuth-doped yttrium vanadate photocatalyst.

[0017] The photocatalytic performance test of the photocatalyst fixed bed degrading ethylene gas of the present invention is carried out under simulated sunlight. The experimental proc...

Embodiment 2

[0021] Weigh 1.628g of yttrium nitrate and 0.364g of bismuth nitrate, dissolve them in 50mL of acetic acid and water mixed solution, add 5.006g of acetylacetone and 7.010g of acetylacetone and stir for 1 hour after they are completely dissolved. Weigh 0.585g of ammonium metavanadate, dissolve it in 50mL of hot aqueous solution, add it to the above solution after it is completely dissolved, heat and stir until reflux, the solution changes from light yellow to reddish brown, keep for 3 hours, and then cool to room temperature. Take an appropriate amount of the solution and place it in a vacuum constant temperature drying oven, evaporate to dryness at 60°C, grind it into powder, put it into a muffle furnace and bake it at 550°C for 3 hours to obtain a bismuth-doped yttrium vanadate photocatalyst.

[0022] The photocatalytic performance test of the photocatalyst fluidized bed degrading ethylene gas of the present invention is carried out under simulated sunlight. The experimental ...

Embodiment 3

[0026] Weigh 1.4363g of yttrium nitrate and 0.6063g of bismuth nitrate, dissolve them in 50mL of acetic acid and water mixed solution, add 5.006g of acetylacetone and 7.010g of acetylacetone and stir for 1 hour after they are completely dissolved. Weigh 0.585g of ammonium metavanadate, dissolve it in 50mL of hot aqueous solution, add it to the above solution after it is completely dissolved, heat and stir until reflux, the solution changes from light yellow to reddish brown, keep for 3 hours, and then cool to room temperature. Take an appropriate amount of the solution and place it in a vacuum constant temperature drying oven, evaporate to dryness at 60°C, grind it into powder, put it into a muffle furnace and bake it at 550°C for 3 hours to obtain a bismuth-doped yttrium vanadate photocatalyst. Under simulated sunlight irradiation, the performance test results of gas-phase degradation of ethylene in fixed bed: the ethylene degradation rate reached 65% within 60 minutes; the pe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a bismuth-doped yttrium vanadate semiconductor for photocatalytic degradation of ethylene. A bismuth-doped yttrium vanadate photocatalyst is low in cost, high in photocatalytic activity and good in stability, a static bed and a fluid bed can efficiently perform the photocatalytic degradation on ethylene under simulated sunlight irradiation, and the photocatalyst is very easy to collect and recycle, and has a good application prospect.

Description

technical field [0001] The invention relates to a purification technology for photocatalytic degradation of ethylene by a bismuth-doped yttrium vanadate semiconductor photocatalyst. Efficient photocatalytic oxidation of ethylene gas to achieve the purpose of ethylene purification. The invention belongs to the field of inorganic nanometer photocatalytic materials. Background technique [0002] my country is a big country in the production and consumption of fruits and vegetables, and its output and per capita consumption of fruits and vegetables have always been in the forefront of the world. However, due to poor fruit and vegetable storage technology, a large number of fruits and vegetables rot and deteriorate or deteriorate in quality during transportation and storage, causing tens of billions of economic losses to the country and farmers every year. As a fruit and vegetable ripening agent, ethylene gas plays an important role in the growth and storage of fruits and veget...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B01D53/86B01D53/72
Inventor 易志国张耀红江琳沁陈绪兴
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap