32 results about "Yttrium orthovanadate" patented technology

This disclosure features fluorescent lamps that include a phosphor layer including at least one phosphor, which in the past has not been commercially usable in lamps or in some cases suffers from performance problems such as poor brightness. These problems of the phosphors were caused, for example, by mercury ion bombardment or exposure to 185 nm radiation from the discharge. These problems are expected to be avoided by coating particles of one or more of the phosphors, such as using atomic layer deposition in which the coating is not more than 500 nm in thickness. Examples of phosphors that can be coated are yttrium vanadate activated with europium or yttrium vanadate phosphate activated with europium. The coating can be selected from the group consisting of alumina, yttria, lanthanum oxide, magnesium aluminate spinel, magnesium oxide and combinations thereof.

The invention relates to a raw material synthesis method for growing yttrium vanadate crystal through pulling method and in particular to a preparation method of yttrium vanadate raw material doped with yttrium vanadate and rare earth ions (RE = Nd<3+>, Yb<3+> or Ce<3+>). The method is characterized in that the method comprises the following steps: dissolving ammonium metavanadate (NH4VO3) in aqueous solution of ammonia to obtain ammonium metavanadate solution; dissolving yttrium oxide in nitric acid to obtain yttrium nitrate solution; mixing the two solutions fully, adding proper additive solution, dropwise adding the mixed solution in aqueous solution of ammonia to maintain a certain pH value for the solution and obtain yttrium vanadate precipitate; standing precipitate for some time, washing, filtrating, performing reprecipitation; drying the obtained yttrium vanadate, tabletting and finally sintering the pressed yttrium vanadate at high temperature for some time. The yttrium vanadate raw material obtained by the invention can be used for growing monocrystal through pulling method, the obtained crystal has good quality, no obvious scattering, stripe and dark spot, and the finished product ratio of yttrium vanadate crystal is high.

The invention discloses yttrium vanadate doped indium white fluorescent powder, which has a general formula of composition: Y1-xInxVO4, wherein x is the value of the molar ratio of indium as an activating agent and is more than 0 and less than or equal to 0.07. The invention adopts the prior solid-phase synthesis method, creatively adds In<3+> into YVO4 fluorescent powder to obtain the yttrium vanadate doped the indium white fluorescent powder which can emit white light; and the white fluorescent powder has strong luminous intensity and can be applied to equipment and a device which utilize photoluminescence and luminous property excitated by cathode ray of the fluorescent powder, in particular to a projection television display, an FED and a Head-up Display and other occasions which have high requirement on the luminous brightness and the luminous efficiency of the fluorescent powder and has important industrial application value. In addition, the method for preparing the white fluorescent powder is simple and easy to operate; raw materials are cheap and easy to obtain; and the white fluorescent powder is suitable for industrialized production, has no three industrial wastes basically in the reaction process and belongs to an industry with environmental protection, low energy consumption and high benefit.

The invention provides an optical device for metal surface polishing. A laser beam emitted from a femtosecond laser light source passes through a yttrium vanadate birefringent crystal, an attenuationpipe and a focusing objective lens to be focused on a metal surface on a 3D mobile platform and conduct laser polishing treatment on the metal surface to obtain the smooth polished surface. The optical device for metal surface polishing, provided by the invention, realizes polishing on the metal surface by controlling related femtosecond laser machining parameters. Compared with an existing mechanical polishing method, one-time large-area quick polishing and micro-area polishing can be realized without abrasive paper, abrasive paste, chemical corrosive agents and other auxiliary materials. Moreover, the whole machining process is simple and easy to operate, the thermal effect can be neglected, and the high-precision polishing effect can be achieved. Meanwhile, through non-contact machining, damage, contamination and the like of stress to the surface of metal tungsten sample can be effectively avoided.

The invention discloses a metal nanoparticle-doped yttrium vanadate luminescent material and a preparation method thereof, belonging to the field of luminescent materials. The general chemical formula of the luminescent material is Y1-x-yVO4:Eux,Aly,Mz, wherein M is at least one selected from metal nanoparticles consisting of Ag, Au, Pt, Pd and Cu, x is more than 0 and no more than 0.2, y is more than 0 and no more than 0.1, and z is the mol ratio of M to Y1-x-yVO4:Eux,Aly and is more than 0 and no more than 1 * 10<-2>. In the metal nanoparticle-doped yttrium vanadate luminescent material, the M metal particle is introduced, so the yttrium vanadate luminescent material has greatly improved luminous efficiency under same excitation conditions and the wavelength of emitted light is not changed.

An optical waveguide device 1 includes a thin layer 3 and a ridge portion 5 loaded on the thin layer 3. The thin layer 3 is made of an optical material selected from the group consisting of lithium niobate, lithium tantalate, lithium niobate-lithium tantalate, yttrium aluminum garnet, yttrium vanadate, gadolinium vanadate, potassium gadolinium tungstate; and potassium yttrium tungstate. The ridge portion 5 is made of tantalum pentoxide and has a trapezoid shape viewed in a cross section perpendicular to a direction of propagation of light. The ridge portion is not peeled off from the thin layer in a tape peeling test.

The invention discloses a liquid-phase automatic synthesis reactor of yttrium vanadate. The liquid-phase automatic synthesis reactor can be used for the liquid-phase chemical synthesis of yttrium vanadate, and is especially suitable for the raw material synthesis of czochralski method growth yttrium vanadate and crystals doped therein. The intelligent synthesis reactor is composed of an automatic feeding zone, a raw material dissolving zone, a pumping-filtration impurity-removal zone, a synthetic reaction zone and a PLC intelligent control device. The liquid-phase automatic synthesis reactor can realize the streamline production comprising the operations of intelligent control, automatic feeding, raw material dissolving, pumping-filtration impurity-removal, and synthetic reaction of the whole raw material preparation process, has the characteristics of intelligence, saving, environmental protection, high efficiency, stability, reliability and the like, and can strongly push forward the standardized and large-scale development of the crystal industry.

A growth method of neodymium-doped yttrium vanadate and yttrium vanadate composite laser crystals, which is formed by growing non-doped yttrium vanadate single crystals at both ends of neodymium-doped yttrium vanadate single crystals by using a hydrothermal growth furnace, and the crystal integrity Well, it is cut and processed to make a laser, which has broad application prospects in the field of miniaturized, high-efficiency, and low-threshold solid-state lasers.

The invention discloses a device for improving spot quality of non-linear crystal frequency-conversion laser. The device comprises a non-linear crystal unit and a walk-off compensation crystal unit, wherein the non-linear crystal unit comprises a non-linear crystal which is composed of beta-barium borate crystals or caesium lithium borate; the walk-off compensation crystal unit comprises an uniaixal crystal which is composed of yttrium vanadate crystals or alpha-barium borate crystals. The device for improving the spot quality of the non-linear crystal frequency-conversion laser performs compensating and shaping treatment on laser spots frequency-converted by the non-linear crystal through the walk-off compensation crystal to obtain round laser spots under the premise of not losing the optical power of converting laser, thereby improving the spot quality. Meanwhile, the device for improving the spot quality of the non-linear crystal frequency-conversion laser is simple in operation, significant in effects, low in cost and capable of solving the technical problem of quality reduction of output laser spots.

The invention relates to a bismuth-doped yttrium vanadate semiconductor for photocatalytic degradation of ethylene. A bismuth-doped yttrium vanadate photocatalyst is low in cost, high in photocatalytic activity and good in stability, a static bed and a fluid bed can efficiently perform the photocatalytic degradation on ethylene under simulated sunlight irradiation, and the photocatalyst is very easy to collect and recycle, and has a good application prospect.

The invention relates to a monolithic integrated green pulse laser based on neodymium doped yttrium vanadate and potassium titanium oxyphosphate gluing crystal and preparation thereof, wherein, the energy-carrying ion beam technology and the plasmon resonance effect are applied, and the injection energy of 100 DEG C and 100 DEG C is used as the injection energy of 100 DEG C and 100 DEG C respectively. A metal nanoparticle-based saturable absorption mirror is integrate into a Nd: YVO4 laser crystal at a dose of (1- 10) * 1016 ion/cm2 for producing a pulsed laser at a wavelength of about 1 micron. The prepared Nd: YVO_4 crystals were bonded or photocolloidally bonded to the KTP crystals which satisfy the phase matching of class II 1064 nm - 532 nm to form a miniaturized integrated device which can generate 532 nm green laser pulses. The invention has the advantages of high conversion efficiency, good beam quality, long service life, convenient use and the like, and can generate green light pulses with high peak power and high brightness, and has important applications in color display, laser processing, laser medical treatment, stylus and the like.

The invention discloses a praseodymium-ytterbium co-doped yttrium vanadate up-conversion luminescent material with a chemical general formula of Y(1-x-y)VO4:xPr<3+>, yYb<3+>, wherein x is 0.01-0.08 and y is 0-0.1. In the photoluminescence spectrum of the praseodymium-ytterbium co-doped yttrium vanadate up-conversion luminescent material, the excitation wavelength of the praseodymium-ytterbium co-doped yttrium vanadate up-conversion luminescent material is 980nm, the transition radiation from <3>P0 to <3>H4 of the Pr<3+> ion forms a luminescence peak in the 485nm wavelength area, and the praseodymium-ytterbium co-doped yttrium vanadate up-conversion luminescent material can be used as a blue light luminescent material. The invention also provides a preparation method of the praseodymium-ytterbium co-doped yttrium vanadate up-conversion luminescent material and an organic LED (light emitting diode) using the praseodymium-ytterbium co-doped yttrium vanadate up-conversion luminescent material.

A polarizing prism mad eof YVO4 crystal features that its angle theta must be greater than alpha e but less han alpha o to ensure full reflection of slow light on air gap interface, a high-safety polarizing angle beta must exist to ensure complete linear polarization of outgoing light, and the fast light must have the transmission rate at air gap interface as high as passible. Its advantages are with transmission range, great birefringence, high optical uniformity, low temp coefficient, and high hardness.

The invention discloses a composite metal ceramic material. The composite metal ceramic material is prepared from the following raw materials in parts by weight: 10 to 20 parts of silicon dioxide, 2 to 5 parts of anhydrous cupric sulfate, 2 to 8 parts of silicon carbide, 5 to 10 parts of kaolin, 1 to 5 parts of quartz sand, 5 to 10 parts of tungsten dioxide, 2 to 5 parts of antimonous oxide, 1 to 5 parts of thorium sulfate, 1 to 3 parts of germanium nitrate, 2 to 5 parts of lanthanum bromide, 5 to 10 parts of aluminum magnesium silicate, 1 to 5 parts of calcium carbonate, 5 to 10 parts of sodium silicate, 2 to 5 parts of fly ash and 1 to 5 parts of yttrium orthovanadate. The composite material has the advantages of better high temperature resistance, bending strength and toughness, easily-obtained raw materials, lower preparation cost and low process conditions; the composite metal ceramic material can better meet the demands of people.

The invention discloses a preparation method of rare-earth yttrium vanadate. Yttrium vanadate is of a sarciniform structure and is prepared by the following steps: (1) preparing a mixed suspension: preparing a yttrium nitrate and sodium orthovanadate mixed suspension by deionized water and a surfactant, wherein the molarity of Y<3+>/VO4<3-> is (1-1.2): 1, and the concentration of the surfactant is 0.8-3.2%; (2) enabling hydrothermal reaction: transferring the mixed suspension into a closed container, sealing, then placing in a drying oven for reaction at 150-200 DEG C for 8-24 h, and collecting the solid to obtain sarciniform yttrium vanadate. The preparation method can overcome the shortcomings of troublesome preparation procedure, long reaction time and poor environmental friendliness in the prior art.

The invention is applicable to the technical field of biological detection, and provides a microfluidic chip for capturing and/or counting cells as well as a preparation method and application of themicrofluidic chip. The microfluidic chip comprises a first base layer, an antibody-modified inverse opal photonic crystal structure, a second base layer and a microfluidic cavity, wherein the antibody-modified inverse opal photonic crystal structure is arranged on the first base layer and comprises an antibody modification layer and a yttrium vanadate inverse opal structure layer doped with Yb<3+>and Er<3+>; the second base layer is arranged on one side, close to the antibody-modified inverse opal photonic crystal structure, of the first base layer; and the microfluidic cavity is arranged between the first base layer and the second base layer. The photonic band gaps are controlled by regulating the size of the minimum repetitive units of photonic crystals, a double-layer Yb<3+> and Er<3+>doped yttrium vanadate inverse opal structure with different apertures and different band gaps is manufactured, up-conversion green light emission can be obviously enhanced through the band gap effect of the photonic crystals, and the problem of insufficient fluorescence intensity caused by low quantum efficiency in the existing up-conversion luminescence process is solved.